InGaAs/GaAs saturable absorber for diode-pumped passively Q-switched dual-wavelength Tm:YAP lasers

Baoquan Yao; Yi Tian; Gang Li; Yuezhu Wang

doi:10.1364/OE.18.013574

InGaAs/GaAs saturable absorber for diode-pumped passively Q-switched dual-wavelength Tm:YAP lasers

Baoquan Yao^*
, Yi Tian
, Gang Li
, Yuezhu Wang

^*Corresponding author for this work

School of Astronautics

Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

79 Scopus citations

Abstract

We demonstrate the first use of InGaAs/GaAs as a saturable absorber in the Q-switching of a diode pumped Tm³⁺ doped laser operating at the wavelengths of 1940 nm and 1986 nm. The influence of the semiconductor saturable absorber's (SESA) position and thermal lens effect on the Q-switch characteristics was investigated. With a pump power of 35 W, the maximum pulse energy of 28.1 μJ with a pulse width of 447 ns at the pulse repetition frequency (PRF) of 43.7 kHz was obtained by selecting the appropriate position of the SESA.

Original language	English
Pages (from-to)	13574-13579
Number of pages	6
Journal	Optics Express
Volume	18
Issue number	13
DOIs	https://doi.org/10.1364/OE.18.013574
State	Published - 21 Jun 2010

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abstract = "We demonstrate the first use of InGaAs/GaAs as a saturable absorber in the Q-switching of a diode pumped Tm3+ doped laser operating at the wavelengths of 1940 nm and 1986 nm. The influence of the semiconductor saturable absorber's (SESA) position and thermal lens effect on the Q-switch characteristics was investigated. With a pump power of 35 W, the maximum pulse energy of 28.1 μJ with a pulse width of 447 ns at the pulse repetition frequency (PRF) of 43.7 kHz was obtained by selecting the appropriate position of the SESA.",

author = "Baoquan Yao and Yi Tian and Gang Li and Yuezhu Wang",

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T1 - InGaAs/GaAs saturable absorber for diode-pumped passively Q-switched dual-wavelength Tm:YAP lasers

AU - Yao, Baoquan

AU - Tian, Yi

AU - Li, Gang

AU - Wang, Yuezhu

PY - 2010/6/21

Y1 - 2010/6/21

N2 - We demonstrate the first use of InGaAs/GaAs as a saturable absorber in the Q-switching of a diode pumped Tm3+ doped laser operating at the wavelengths of 1940 nm and 1986 nm. The influence of the semiconductor saturable absorber's (SESA) position and thermal lens effect on the Q-switch characteristics was investigated. With a pump power of 35 W, the maximum pulse energy of 28.1 μJ with a pulse width of 447 ns at the pulse repetition frequency (PRF) of 43.7 kHz was obtained by selecting the appropriate position of the SESA.

AB - We demonstrate the first use of InGaAs/GaAs as a saturable absorber in the Q-switching of a diode pumped Tm3+ doped laser operating at the wavelengths of 1940 nm and 1986 nm. The influence of the semiconductor saturable absorber's (SESA) position and thermal lens effect on the Q-switch characteristics was investigated. With a pump power of 35 W, the maximum pulse energy of 28.1 μJ with a pulse width of 447 ns at the pulse repetition frequency (PRF) of 43.7 kHz was obtained by selecting the appropriate position of the SESA.

UR - https://www.scopus.com/pages/publications/77953844424

U2 - 10.1364/OE.18.013574

DO - 10.1364/OE.18.013574

M3 - 文章

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AN - SCOPUS:77953844424

SN - 1094-4087

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EP - 13579

JO - Optics Express

JF - Optics Express

IS - 13

ER -

InGaAs/GaAs saturable absorber for diode-pumped passively Q-switched dual-wavelength Tm:YAP lasers

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