Infrared radiation dynamic response and parametric analysis for silicon solar cell using photocarrier radiometry

An analytic mathematical model of modulated laser-induced minority carrier density wave of silicon solar cells is developed, and light-induced carrier recombination radiation luminescence method (photocarrier radiometry (PCR)) is employed to detect the doping concentration, impedance and carrier transport parameters. The double knee characteristics of frequency domain response curve are investigated, and in a small ac signal case, the equivalent circuit topology structure of a solar cell is constructed. Through simulation analysis based on minority carrier density wave mathematical model, the effects of doping concentration, resistance and carrier transport parameters on the PCR frequency domain response are investigated. Donor/acceptor concentration, shunt resistance and carrier transport parameters of Si solar cell are obtained by PCR frequency-scanning experiments and multi-parameter fitting. The results show that the first knee position of PCR-detected large-area solar-cell frequency domain response curve is determined by the capacitive effect. The simplified mathematical model can be used to quantitatively describe and determine the doping concentration, shunt resistance and carrier transport parameters of silicon solar cell.