Influences of the silicon Schottki FET active area irregularity upon volt-ampere characteristics and Wunsch-bell dependency

L. N. Akhramovich; S. A. Zuev; V. V. Starostenko; V. Y. Tereschenko; G. I. Churyumov; A. A. Borisov; A. M. Petrov

doi:10.1109/CRMICO.2006.256174

Influences of the silicon Schottki FET active area irregularity upon volt-ampere characteristics and Wunsch-bell dependency

L. N. Akhramovich
, S. A. Zuev
, V. V. Starostenko
, V. Y. Tereschenko
, G. I. Churyumov
, A. A. Borisov
, A. M. Petrov

V.I. Vernadsky Crimean Federal University
Kharkiv National University of Radio Electronics
Department of Military of Russia

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In the paper the results of numerical calculations of heterogeneity influence of active area silicon FET on development of electrothermal processes in a crystal of the transistor from the beginning of avalanche breakdown before catastrophic thermal breakdown of the device stepping at achievement of values of a lattice temperature in the current cord area, the appropriate temperature of fusion Au of substrate are presented.

Original language	English
Title of host publication	2006 16th International Crimean Microwave and Telecommunication Technology, CriMiCo
Pages	723-724
Number of pages	2
DOIs	https://doi.org/10.1109/CRMICO.2006.256174
State	Published - 2006
Externally published	Yes
Event	2006 16th International Crimean Microwave and Telecommunication Technology, CriMiCo - Sevastopol, Ukraine Duration: 11 Sep 2006 → 15 Sep 2006

Publication series

Name	2006 16th International Crimean Microwave and Telecommunication Technology, CriMiCo

Conference

Conference	2006 16th International Crimean Microwave and Telecommunication Technology, CriMiCo
Country/Territory	Ukraine
City	Sevastopol
Period	11/09/06 → 15/09/06

Access to Document

10.1109/CRMICO.2006.256174

Cite this

Akhramovich, L. N., Zuev, S. A., Starostenko, V. V., Tereschenko, V. Y., Churyumov, G. I., Borisov, A. A., & Petrov, A. M. (2006). Influences of the silicon Schottki FET active area irregularity upon volt-ampere characteristics and Wunsch-bell dependency. In 2006 16th International Crimean Microwave and Telecommunication Technology, CriMiCo (pp. 723-724). Article 4023456 (2006 16th International Crimean Microwave and Telecommunication Technology, CriMiCo). https://doi.org/10.1109/CRMICO.2006.256174

Akhramovich, L. N. ; Zuev, S. A. ; Starostenko, V. V. et al. / Influences of the silicon Schottki FET active area irregularity upon volt-ampere characteristics and Wunsch-bell dependency. 2006 16th International Crimean Microwave and Telecommunication Technology, CriMiCo. 2006. pp. 723-724 (2006 16th International Crimean Microwave and Telecommunication Technology, CriMiCo).

@inproceedings{4dffff4488544fcb9eddb4ee7880ee33,

title = "Influences of the silicon Schottki FET active area irregularity upon volt-ampere characteristics and Wunsch-bell dependency",

abstract = "In the paper the results of numerical calculations of heterogeneity influence of active area silicon FET on development of electrothermal processes in a crystal of the transistor from the beginning of avalanche breakdown before catastrophic thermal breakdown of the device stepping at achievement of values of a lattice temperature in the current cord area, the appropriate temperature of fusion Au of substrate are presented.",

author = "Akhramovich, \{L. N.\} and Zuev, \{S. A.\} and Starostenko, \{V. V.\} and Tereschenko, \{V. Y.\} and Churyumov, \{G. I.\} and Borisov, \{A. A.\} and Petrov, \{A. M.\}",

year = "2006",

doi = "10.1109/CRMICO.2006.256174",

language = "英语",

isbn = "9663220066",

series = "2006 16th International Crimean Microwave and Telecommunication Technology, CriMiCo",

pages = "723--724",

booktitle = "2006 16th International Crimean Microwave and Telecommunication Technology, CriMiCo",

note = "2006 16th International Crimean Microwave and Telecommunication Technology, CriMiCo ; Conference date: 11-09-2006 Through 15-09-2006",

}

Akhramovich, LN, Zuev, SA, Starostenko, VV, Tereschenko, VY, Churyumov, GI, Borisov, AA & Petrov, AM 2006, Influences of the silicon Schottki FET active area irregularity upon volt-ampere characteristics and Wunsch-bell dependency. in 2006 16th International Crimean Microwave and Telecommunication Technology, CriMiCo., 4023456, 2006 16th International Crimean Microwave and Telecommunication Technology, CriMiCo, pp. 723-724, 2006 16th International Crimean Microwave and Telecommunication Technology, CriMiCo, Sevastopol, Ukraine, 11/09/06. https://doi.org/10.1109/CRMICO.2006.256174

Influences of the silicon Schottki FET active area irregularity upon volt-ampere characteristics and Wunsch-bell dependency. / Akhramovich, L. N.; Zuev, S. A.; Starostenko, V. V. et al.
2006 16th International Crimean Microwave and Telecommunication Technology, CriMiCo. 2006. p. 723-724 4023456 (2006 16th International Crimean Microwave and Telecommunication Technology, CriMiCo).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

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AU - Akhramovich, L. N.

AU - Zuev, S. A.

AU - Starostenko, V. V.

AU - Tereschenko, V. Y.

AU - Churyumov, G. I.

AU - Borisov, A. A.

AU - Petrov, A. M.

PY - 2006

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AB - In the paper the results of numerical calculations of heterogeneity influence of active area silicon FET on development of electrothermal processes in a crystal of the transistor from the beginning of avalanche breakdown before catastrophic thermal breakdown of the device stepping at achievement of values of a lattice temperature in the current cord area, the appropriate temperature of fusion Au of substrate are presented.

UR - https://www.scopus.com/pages/publications/45249110429

U2 - 10.1109/CRMICO.2006.256174

DO - 10.1109/CRMICO.2006.256174

M3 - 会议稿件

AN - SCOPUS:45249110429

SN - 9663220066

SN - 9789663220062

T3 - 2006 16th International Crimean Microwave and Telecommunication Technology, CriMiCo

SP - 723

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BT - 2006 16th International Crimean Microwave and Telecommunication Technology, CriMiCo

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Y2 - 11 September 2006 through 15 September 2006

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Akhramovich LN, Zuev SA, Starostenko VV, Tereschenko VY, Churyumov GI, Borisov AA et al. Influences of the silicon Schottki FET active area irregularity upon volt-ampere characteristics and Wunsch-bell dependency. In 2006 16th International Crimean Microwave and Telecommunication Technology, CriMiCo. 2006. p. 723-724. 4023456. (2006 16th International Crimean Microwave and Telecommunication Technology, CriMiCo). doi: 10.1109/CRMICO.2006.256174

Influences of the silicon Schottki FET active area irregularity upon volt-ampere characteristics and Wunsch-bell dependency

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