Abstract
In this paper, MgO film is successfully grown on polycrystalline and monocrystalline alumina substrates using sol-gel method, and polycrystalline and monocrystalline Mg-Al spinels are fabricated by solid state reaction, respectively. The influence of annealing temperature and time on the lattice structure and growth of the formed Mg-Al spinel layer has been investigated. It is indicated that the annealing temperature and time on the as-synthesized polycrystalline Mg-Al spinel has more significant influence than that of single crystal Mg-Al spinel. The thickness of the Mg-Al spinel layer increases with the annealing temperature, both for polycrystalline and for monocrystalline alumina substrates. And the significantly intercrystalline diffusion of Mg 2+ ions and Al 3+ ions results in a quicker growth velocity of the Mg-Al spinel layer than that of intracrystalline diffusion.
| Original language | English |
|---|---|
| Pages (from-to) | 5012-5016 |
| Number of pages | 5 |
| Journal | Applied Surface Science |
| Volume | 257 |
| Issue number | 11 |
| DOIs | |
| State | Published - 15 Mar 2011 |
Keywords
- Alumina
- Diffusion
- Mg-Al spinel
- Solid state reaction
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