Influence of the ex-situ and in-situ annealed self-buffer layer on ZnO film

Jinzhong Wang; Vincent Sallet; Gaëlle Amiri; Jean François Rommelluere; Alain Lusson; E. Rzepka; John E. Lewis; Pierre Galtier; Elvira Fortunato; Rodrigo Martins; Ouri Gorochov

doi:10.1002/pssc.200564704

Influence of the ex-situ and in-situ annealed self-buffer layer on ZnO film

Jinzhong Wang^*
, Vincent Sallet
, Gaëlle Amiri
, Jean François Rommelluere
, Alain Lusson
, E. Rzepka
, John E. Lewis
, Pierre Galtier
, Elvira Fortunato
, Rodrigo Martins
, Ouri Gorochov

^*Corresponding author for this work

NOVA University Lisbon
C.N.R.S.
SUNY Plattsburgh

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Two self-buffer layers were grown on c-plane sapphire substrates by atmospheric MOCVD method using DEZn, tert-butanol as precursors and H ₂ as carrier gas. Then, they were respectively annealed in growth process and oxygen environment. After that, ZnO films were respectively grown on them. XRD spectra show that all the films were grown in [002] orientation. Furthermore, the film with a buffer layer annealed in oxygen exhibits much higher crystal quality. Its FWHM of the rocking curve is only 567arcsec. Furthermore, its Raman scattering spectrum appears a much stronger E₂ mode peak at 436cm^-1 and its PL spectrum appears a shoulder at 3.367eV on the higher energy side.

Original language	English
Pages (from-to)	1010-1013
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Volume	3
Issue number	4
DOIs	https://doi.org/10.1002/pssc.200564704
State	Published - 2006
Externally published	Yes
Event	12th International Conference on II-VI Compounds - Warsaw, Poland Duration: 12 Sep 2005 → 16 Sep 2005

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@article{6e81fa0017444b0699bf90430e06dff2,

title = "Influence of the ex-situ and in-situ annealed self-buffer layer on ZnO film",

abstract = "Two self-buffer layers were grown on c-plane sapphire substrates by atmospheric MOCVD method using DEZn, tert-butanol as precursors and H 2 as carrier gas. Then, they were respectively annealed in growth process and oxygen environment. After that, ZnO films were respectively grown on them. XRD spectra show that all the films were grown in [002] orientation. Furthermore, the film with a buffer layer annealed in oxygen exhibits much higher crystal quality. Its FWHM of the rocking curve is only 567arcsec. Furthermore, its Raman scattering spectrum appears a much stronger E2 mode peak at 436cm-1 and its PL spectrum appears a shoulder at 3.367eV on the higher energy side.",

author = "Jinzhong Wang and Vincent Sallet and Ga{\"e}lle Amiri and Rommelluere, \{Jean Fran{\c c}ois\} and Alain Lusson and E. Rzepka and Lewis, \{John E.\} and Pierre Galtier and Elvira Fortunato and Rodrigo Martins and Ouri Gorochov",

year = "2006",

doi = "10.1002/pssc.200564704",

language = "英语",

volume = "3",

pages = "1010--1013",

journal = "Physica Status Solidi C: Conferences",

issn = "1610-1634",

publisher = "Wiley-VCH Verlag",

number = "4",

note = "12th International Conference on II-VI Compounds ; Conference date: 12-09-2005 Through 16-09-2005",

}

TY - JOUR

T1 - Influence of the ex-situ and in-situ annealed self-buffer layer on ZnO film

AU - Wang, Jinzhong

AU - Sallet, Vincent

AU - Amiri, Gaëlle

AU - Rommelluere, Jean François

AU - Lusson, Alain

AU - Rzepka, E.

AU - Lewis, John E.

AU - Galtier, Pierre

AU - Fortunato, Elvira

AU - Martins, Rodrigo

AU - Gorochov, Ouri

PY - 2006

Y1 - 2006

N2 - Two self-buffer layers were grown on c-plane sapphire substrates by atmospheric MOCVD method using DEZn, tert-butanol as precursors and H 2 as carrier gas. Then, they were respectively annealed in growth process and oxygen environment. After that, ZnO films were respectively grown on them. XRD spectra show that all the films were grown in [002] orientation. Furthermore, the film with a buffer layer annealed in oxygen exhibits much higher crystal quality. Its FWHM of the rocking curve is only 567arcsec. Furthermore, its Raman scattering spectrum appears a much stronger E2 mode peak at 436cm-1 and its PL spectrum appears a shoulder at 3.367eV on the higher energy side.

AB - Two self-buffer layers were grown on c-plane sapphire substrates by atmospheric MOCVD method using DEZn, tert-butanol as precursors and H 2 as carrier gas. Then, they were respectively annealed in growth process and oxygen environment. After that, ZnO films were respectively grown on them. XRD spectra show that all the films were grown in [002] orientation. Furthermore, the film with a buffer layer annealed in oxygen exhibits much higher crystal quality. Its FWHM of the rocking curve is only 567arcsec. Furthermore, its Raman scattering spectrum appears a much stronger E2 mode peak at 436cm-1 and its PL spectrum appears a shoulder at 3.367eV on the higher energy side.

UR - https://www.scopus.com/pages/publications/33646242258

U2 - 10.1002/pssc.200564704

DO - 10.1002/pssc.200564704

M3 - 会议文章

AN - SCOPUS:33646242258

SN - 1610-1634

VL - 3

SP - 1010

EP - 1013

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 4

T2 - 12th International Conference on II-VI Compounds

Y2 - 12 September 2005 through 16 September 2005

ER -

Influence of the ex-situ and in-situ annealed self-buffer layer on ZnO film

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