Abstract
The effects of the substrate temperature and ion impact energy on the surface roughness and morphology of insulating cerium oxide films fabricated by dual plasma deposition were investigated. Cerium oxide films were synthesized on Si(1 0 0) substrate, and the influence of the substrate temperature and applied voltage on the surface roughness was systematically studied. Our results indicate that the roughness of the deposited films decreased when the substrate temperature was increased, probably because of enhanced surface diffusion of the adatoms. The ion kinetic energy had a similar effect as the substrate temperature, and it is believed that a higher ion kinetic energy also improves the surface diffusion of adatoms. It is found that a direct-current voltage applied to the substrate could lead to a rougher surface, whereas an appropriate alternating-current voltage gave rise to a smoother topography.
| Original language | English |
|---|---|
| Pages (from-to) | 75-80 |
| Number of pages | 6 |
| Journal | Materials Science and Engineering: A |
| Volume | 336 |
| Issue number | 1-2 |
| DOIs | |
| State | Published - 25 Oct 2002 |
Keywords
- Cerium
- Plasma processing and deposition
- Surface roughness
Fingerprint
Dive into the research topics of 'Influence of temperature and ion kinetic energy on surface morphology of CeO2 films prepared by dual plasma deposition'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver