Influence of pulse electromagnetic fields on integrated memory chips

L. N. Akhramovich; M. P. Gribskii; Ye V. Grigor'ev; S. A. Zuev; V. V. Starostenko; G. I. Churyumov

doi:10.1615/TelecomRadEng.v66.i19.90

Influence of pulse electromagnetic fields on integrated memory chips

L. N. Akhramovich^*
, M. P. Gribskii
, Ye V. Grigor'ev
, S. A. Zuev
, V. V. Starostenko
, G. I. Churyumov

^*Corresponding author for this work

Tavriya National University
Kharkiv National University of Radio Electronics

Research output: Contribution to journal › Article › peer-review

Abstract

The experimental procedure for immediately effecting pulse electromagnetic fields on present day memory chips is described. The threshold values of the fields are found, at which there are operating errors in the chips, degradation phenomena in microstructure elements of crystals, and catastrophic failures of chips.

Original language	English
Pages (from-to)	1799-1804
Number of pages	6
Journal	Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika)
Volume	66
Issue number	19
DOIs	https://doi.org/10.1615/TelecomRadEng.v66.i19.90
State	Published - 2007
Externally published	Yes

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10.1615/TelecomRadEng.v66.i19.90

Cite this

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title = "Influence of pulse electromagnetic fields on integrated memory chips",

abstract = "The experimental procedure for immediately effecting pulse electromagnetic fields on present day memory chips is described. The threshold values of the fields are found, at which there are operating errors in the chips, degradation phenomena in microstructure elements of crystals, and catastrophic failures of chips.",

author = "Akhramovich, \{L. N.\} and Gribskii, \{M. P.\} and Grigor'ev, \{Ye V.\} and Zuev, \{S. A.\} and Starostenko, \{V. V.\} and Churyumov, \{G. I.\}",

year = "2007",

doi = "10.1615/TelecomRadEng.v66.i19.90",

language = "英语",

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T1 - Influence of pulse electromagnetic fields on integrated memory chips

AU - Akhramovich, L. N.

AU - Gribskii, M. P.

AU - Grigor'ev, Ye V.

AU - Zuev, S. A.

AU - Starostenko, V. V.

AU - Churyumov, G. I.

PY - 2007

Y1 - 2007

N2 - The experimental procedure for immediately effecting pulse electromagnetic fields on present day memory chips is described. The threshold values of the fields are found, at which there are operating errors in the chips, degradation phenomena in microstructure elements of crystals, and catastrophic failures of chips.

AB - The experimental procedure for immediately effecting pulse electromagnetic fields on present day memory chips is described. The threshold values of the fields are found, at which there are operating errors in the chips, degradation phenomena in microstructure elements of crystals, and catastrophic failures of chips.

UR - https://www.scopus.com/pages/publications/38149024779

U2 - 10.1615/TelecomRadEng.v66.i19.90

DO - 10.1615/TelecomRadEng.v66.i19.90

M3 - 文章

AN - SCOPUS:38149024779

SN - 0040-2508

VL - 66

SP - 1799

EP - 1804

JO - Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika)

JF - Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika)

IS - 19

ER -

Influence of pulse electromagnetic fields on integrated memory chips

Abstract

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