Influence of O2 Flow Rate on the Properties of Ga2O3 Growth by RF Magnetron Sputtering

Dengyue Li; Hehui Sun; Tong Liu; Hongyan Jin; Zhenghao Li; Yaxin Liu; Donghao Liu; Dongbo Wang

doi:10.3390/mi14020260

Influence of O₂ Flow Rate on the Properties of Ga₂O₃ Growth by RF Magnetron Sputtering

Dengyue Li
, Hehui Sun^*
, Tong Liu^*
, Hongyan Jin^*
, Zhenghao Li
, Yaxin Liu
, Donghao Liu^*
, Dongbo Wang^*

^*Corresponding author for this work

School of Materials Science and Engineering

China National Petroleum Corporation
CAS - Suzhou Institute of Nano-Tech and Nano-Bionics
Suzhou Institute of Product Quality Supervision and Inspection
Harbin Institute of Technology
Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

The influence of the O₂ flow rate on the properties of gallium oxide (Ga₂O₃) by RF magnetron sputtering was studied. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmittance spectra, and photoluminescence (PL) spectra have been employed to study the Ga₂O₃ thin films. With the increase in oxygen flow rate, both the crystal quality and luminescence intensity of the Ga₂O₃ samples first decrease and then enhance. All these observations suggested that the reduction in the oxygen defect density is responsible for the improvement in the crystal quality and emission intensity of the material. Our results demonstrated that high-quality Ga₂O₃ materials could be obtained by adjusting the oxygen flow rate.

Original language	English
Article number	260
Journal	Micromachines
Volume	14
Issue number	2
DOIs	https://doi.org/10.3390/mi14020260
State	Published - Feb 2023

Keywords

GaO
O flow rate
magnetron sputtering

Access to Document

10.3390/mi14020260

Cite this

@article{3aaa977f700a4723b3bec672c9993211,

title = "Influence of O2 Flow Rate on the Properties of Ga2O3 Growth by RF Magnetron Sputtering",

abstract = "The influence of the O2 flow rate on the properties of gallium oxide (Ga2O3) by RF magnetron sputtering was studied. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmittance spectra, and photoluminescence (PL) spectra have been employed to study the Ga2O3 thin films. With the increase in oxygen flow rate, both the crystal quality and luminescence intensity of the Ga2O3 samples first decrease and then enhance. All these observations suggested that the reduction in the oxygen defect density is responsible for the improvement in the crystal quality and emission intensity of the material. Our results demonstrated that high-quality Ga2O3 materials could be obtained by adjusting the oxygen flow rate.",

keywords = "GaO, O flow rate, magnetron sputtering",

author = "Dengyue Li and Hehui Sun and Tong Liu and Hongyan Jin and Zhenghao Li and Yaxin Liu and Donghao Liu and Dongbo Wang",

note = "Publisher Copyright: {\textcopyright} 2023 by the authors.",

year = "2023",

month = feb,

doi = "10.3390/mi14020260",

language = "英语",

volume = "14",

journal = "Micromachines",

issn = "2072-666X",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

number = "2",

}

TY - JOUR

T1 - Influence of O2 Flow Rate on the Properties of Ga2O3 Growth by RF Magnetron Sputtering

AU - Li, Dengyue

AU - Sun, Hehui

AU - Liu, Tong

AU - Jin, Hongyan

AU - Li, Zhenghao

AU - Liu, Yaxin

AU - Liu, Donghao

AU - Wang, Dongbo

PY - 2023/2

Y1 - 2023/2

N2 - The influence of the O2 flow rate on the properties of gallium oxide (Ga2O3) by RF magnetron sputtering was studied. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmittance spectra, and photoluminescence (PL) spectra have been employed to study the Ga2O3 thin films. With the increase in oxygen flow rate, both the crystal quality and luminescence intensity of the Ga2O3 samples first decrease and then enhance. All these observations suggested that the reduction in the oxygen defect density is responsible for the improvement in the crystal quality and emission intensity of the material. Our results demonstrated that high-quality Ga2O3 materials could be obtained by adjusting the oxygen flow rate.

AB - The influence of the O2 flow rate on the properties of gallium oxide (Ga2O3) by RF magnetron sputtering was studied. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmittance spectra, and photoluminescence (PL) spectra have been employed to study the Ga2O3 thin films. With the increase in oxygen flow rate, both the crystal quality and luminescence intensity of the Ga2O3 samples first decrease and then enhance. All these observations suggested that the reduction in the oxygen defect density is responsible for the improvement in the crystal quality and emission intensity of the material. Our results demonstrated that high-quality Ga2O3 materials could be obtained by adjusting the oxygen flow rate.

KW - GaO

KW - O flow rate

KW - magnetron sputtering

UR - https://www.scopus.com/pages/publications/85149058465

U2 - 10.3390/mi14020260

DO - 10.3390/mi14020260

M3 - 文章

AN - SCOPUS:85149058465

SN - 2072-666X

VL - 14

JO - Micromachines

JF - Micromachines

IS - 2

M1 - 260

ER -

Influence of O₂ Flow Rate on the Properties of Ga₂O₃ Growth by RF Magnetron Sputtering

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this