Influence of In-Gap States on the Formation of Two-Dimensional Election Gas at ABO3/SrTiO3 Interfaces

Cheng Jian Li; Hong Xia Xue; Guo Liang Qu; Sheng Chun Shen; Yan Peng Hong; Xin Xin Wang; Ming Rui Liu; Wei Min Jiang; Petre Badica; Lin He; Rui Fen Dou; Chang Min Xiong; Wei Ming Lü; Jia Cai Nie

doi:10.1038/s41598-017-18583-5

Influence of In-Gap States on the Formation of Two-Dimensional Election Gas at ABO₃/SrTiO₃ Interfaces

Cheng Jian Li
, Hong Xia Xue
, Guo Liang Qu
, Sheng Chun Shen
, Yan Peng Hong
, Xin Xin Wang
, Ming Rui Liu
, Wei Min Jiang
, Petre Badica
, Lin He
, Rui Fen Dou
, Chang Min Xiong
, Wei Ming Lü
, Jia Cai Nie^*

^*Corresponding author for this work

School of Physics

Beijing Normal University
Institut de Physique des Materiaux, Bucarest-Magurele

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We explored in-gap states (IGSs) in perovskite oxide heterojunction films. We report that IGSs in these films play a crucial role in determining the formation and properties of interfacial two-dimensional electron gas (2DEG). We report that electron trapping by IGSs opposes charge transfer from the film to the interface. The IGS in films yielded insulating interfaces with polar discontinuity and explained low interface carrier density of conducting interfaces. An ion trapping model was proposed to explain the physics of the IGSs and some experimental findings, such as the unexpected formation of 2DEG at the initially insulating LaCrO₃/SrTiO₃ interface and the influence of substitution layers on 2DEG.

Original language	English
Article number	195
Journal	Scientific Reports
Volume	8
Issue number	1
DOIs	https://doi.org/10.1038/s41598-017-18583-5
State	Published - 1 Dec 2018

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title = "Influence of In-Gap States on the Formation of Two-Dimensional Election Gas at ABO3/SrTiO3 Interfaces",

abstract = "We explored in-gap states (IGSs) in perovskite oxide heterojunction films. We report that IGSs in these films play a crucial role in determining the formation and properties of interfacial two-dimensional electron gas (2DEG). We report that electron trapping by IGSs opposes charge transfer from the film to the interface. The IGS in films yielded insulating interfaces with polar discontinuity and explained low interface carrier density of conducting interfaces. An ion trapping model was proposed to explain the physics of the IGSs and some experimental findings, such as the unexpected formation of 2DEG at the initially insulating LaCrO3/SrTiO3 interface and the influence of substitution layers on 2DEG.",

author = "Li, \{Cheng Jian\} and Xue, \{Hong Xia\} and Qu, \{Guo Liang\} and Shen, \{Sheng Chun\} and Hong, \{Yan Peng\} and Wang, \{Xin Xin\} and Liu, \{Ming Rui\} and Jiang, \{Wei Min\} and Petre Badica and Lin He and Dou, \{Rui Fen\} and Xiong, \{Chang Min\} and L{\"u}, \{Wei Ming\} and Nie, \{Jia Cai\}",

note = "Publisher Copyright: {\textcopyright} 2017 The Author(s).",

year = "2018",

month = dec,

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doi = "10.1038/s41598-017-18583-5",

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journal = "Scientific Reports",

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T1 - Influence of In-Gap States on the Formation of Two-Dimensional Election Gas at ABO3/SrTiO3 Interfaces

AU - Li, Cheng Jian

AU - Xue, Hong Xia

AU - Qu, Guo Liang

AU - Shen, Sheng Chun

AU - Hong, Yan Peng

AU - Wang, Xin Xin

AU - Liu, Ming Rui

AU - Jiang, Wei Min

AU - Badica, Petre

AU - He, Lin

AU - Dou, Rui Fen

AU - Xiong, Chang Min

AU - Lü, Wei Ming

AU - Nie, Jia Cai

PY - 2018/12/1

Y1 - 2018/12/1

N2 - We explored in-gap states (IGSs) in perovskite oxide heterojunction films. We report that IGSs in these films play a crucial role in determining the formation and properties of interfacial two-dimensional electron gas (2DEG). We report that electron trapping by IGSs opposes charge transfer from the film to the interface. The IGS in films yielded insulating interfaces with polar discontinuity and explained low interface carrier density of conducting interfaces. An ion trapping model was proposed to explain the physics of the IGSs and some experimental findings, such as the unexpected formation of 2DEG at the initially insulating LaCrO3/SrTiO3 interface and the influence of substitution layers on 2DEG.

AB - We explored in-gap states (IGSs) in perovskite oxide heterojunction films. We report that IGSs in these films play a crucial role in determining the formation and properties of interfacial two-dimensional electron gas (2DEG). We report that electron trapping by IGSs opposes charge transfer from the film to the interface. The IGS in films yielded insulating interfaces with polar discontinuity and explained low interface carrier density of conducting interfaces. An ion trapping model was proposed to explain the physics of the IGSs and some experimental findings, such as the unexpected formation of 2DEG at the initially insulating LaCrO3/SrTiO3 interface and the influence of substitution layers on 2DEG.

UR - https://www.scopus.com/pages/publications/85040508610

U2 - 10.1038/s41598-017-18583-5

DO - 10.1038/s41598-017-18583-5

M3 - 文章

C2 - 29317754

AN - SCOPUS:85040508610

SN - 2045-2322

VL - 8

JO - Scientific Reports

JF - Scientific Reports

IS - 1

M1 - 195

ER -

Influence of In-Gap States on the Formation of Two-Dimensional Election Gas at ABO₃/SrTiO₃ Interfaces

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