TY - GEN
T1 - Influence of Anti-parallel Diode Characteristics on Gate Drive during IGBT Turn-on Transient
AU - Ma, Mingcheng
AU - Sun, Tianlin
AU - Ren, Jiale
AU - Hao, Yuanchao
AU - Xu, Dianguo
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - IGBT (Insulated Gate Bipolar Transistor) is a widely used semiconductor device in the field of power electronics, commonly used in high-power circuits such as AC variable frequency speed regulation, inverters, and DC transmission. The switching transient of IGBT is influenced by the gate driving strategy and the characteristics of anti-parallel diodes. This paper mainly analyzes the characteristics of IGBT anti-parallel diodes and the common effects of gate drive strategies on the reverse recovery process. The experimental data shows that not only should appropriate driving strategies be selected based on the characteristics of IGBT to suppress the reverse recovery process, but also the characteristics and working conditions of anti-parallel diodes should be taken into account. Only by matching the characteristics of IGBT and antiparallel diode simultaneously with the driving strategy and adjusting it according to working conditions can the normal operation of the circuit be ensured, and losses, stresses, and spikes be minimized as much as possible.
AB - IGBT (Insulated Gate Bipolar Transistor) is a widely used semiconductor device in the field of power electronics, commonly used in high-power circuits such as AC variable frequency speed regulation, inverters, and DC transmission. The switching transient of IGBT is influenced by the gate driving strategy and the characteristics of anti-parallel diodes. This paper mainly analyzes the characteristics of IGBT anti-parallel diodes and the common effects of gate drive strategies on the reverse recovery process. The experimental data shows that not only should appropriate driving strategies be selected based on the characteristics of IGBT to suppress the reverse recovery process, but also the characteristics and working conditions of anti-parallel diodes should be taken into account. Only by matching the characteristics of IGBT and antiparallel diode simultaneously with the driving strategy and adjusting it according to working conditions can the normal operation of the circuit be ensured, and losses, stresses, and spikes be minimized as much as possible.
KW - IGBT
KW - anti-parallel diodes
KW - gate drive strategy
KW - reverse recovery process
UR - https://www.scopus.com/pages/publications/85182329949
U2 - 10.1109/ICEMS59686.2023.10344400
DO - 10.1109/ICEMS59686.2023.10344400
M3 - 会议稿件
AN - SCOPUS:85182329949
T3 - 2023 26th International Conference on Electrical Machines and Systems, ICEMS 2023
SP - 4523
EP - 4526
BT - 2023 26th International Conference on Electrical Machines and Systems, ICEMS 2023
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 26th International Conference on Electrical Machines and Systems, ICEMS 2023
Y2 - 5 November 2023 through 8 November 2023
ER -