Influence of Accumulated Radiation Effects on Single-Event Burnout in SiC MOSFETs

The accumulated radiation effects of preirradiation from different radiation sources on single-event burnout (SEB) of silicon carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs) were investigated. The displacement damage (DD) was introduced by preirradiation of silicon ions, and compared with the devices without preirradiation, it was found that it is had for SEB to occur in the devices with DD introduced after silicon ion irradiations. In contrast, for gamma ray preirradiation, it was found that SEB occurs more easily in the radiated devices by gamma ray. In addition, technology computer aided design (TCAD) is used to simulate the SEB of the devices, and the bulk defect increases the recombination rate of the devices and leads to the decrease of the current density. At the same voltage, the smaller the current density is, the lower the thermal effect will be, and SEB hardly occurs. The drain current and lattice temperature of the devices with oxide charges are higher, and SEB occurs more easily. The simulation results are reasonably consistent with the experimental results. This study provides a valuable reference for the method of SEB hardening.