Induced-charge electroosmotic trapping of particles

Yukun Ren; Weiyu Liu; Yankai Jia; Ye Tao; Jinyou Shao; Yucheng Ding; Hongyuan Jiang

doi:10.1039/c5lc00058k

Induced-charge electroosmotic trapping of particles

Yukun Ren^*
, Weiyu Liu
, Yankai Jia
, Ye Tao
, Jinyou Shao
, Yucheng Ding
, Hongyuan Jiang

^*Corresponding author for this work

School of Mechatronics Engineering, Harbin Institute of Technology
Xi'an Jiaotong University

Research output: Contribution to journal › Article › peer-review

92 Scopus citations

Abstract

Position-controllable trapping of particles on the surface of a bipolar metal strip by induced-charge electroosmotic (ICEO) flow is presented herein. We demonstrate a nonlinear ICEO slip profile on the electrode surface accounting for stable particle trapping behaviors above the double-layer relaxation frequency, while no trapping occurs in the DC limit as a result of a strong upward fluidic drag induced by a linear ICEO slip profile. By extending an AC-flow field effect transistor from the DC limit to the AC field, we reveal that fixed-potential ICEO exceeding RC charging frequency can adjust the particle trapping position flexibly by generating controllable symmetry breaking in a vortex flow pattern. Our results open up new opportunities to manipulate microscopic objects in modern microfluidic systems by using ICEO.

Original language	English
Pages (from-to)	2181-2191
Number of pages	11
Journal	Lab on a Chip
Volume	15
Issue number	10
DOIs	https://doi.org/10.1039/c5lc00058k
State	Published - 21 May 2015
Externally published	Yes

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title = "Induced-charge electroosmotic trapping of particles",

abstract = "Position-controllable trapping of particles on the surface of a bipolar metal strip by induced-charge electroosmotic (ICEO) flow is presented herein. We demonstrate a nonlinear ICEO slip profile on the electrode surface accounting for stable particle trapping behaviors above the double-layer relaxation frequency, while no trapping occurs in the DC limit as a result of a strong upward fluidic drag induced by a linear ICEO slip profile. By extending an AC-flow field effect transistor from the DC limit to the AC field, we reveal that fixed-potential ICEO exceeding RC charging frequency can adjust the particle trapping position flexibly by generating controllable symmetry breaking in a vortex flow pattern. Our results open up new opportunities to manipulate microscopic objects in modern microfluidic systems by using ICEO.",

author = "Yukun Ren and Weiyu Liu and Yankai Jia and Ye Tao and Jinyou Shao and Yucheng Ding and Hongyuan Jiang",

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doi = "10.1039/c5lc00058k",

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T1 - Induced-charge electroosmotic trapping of particles

AU - Ren, Yukun

AU - Liu, Weiyu

AU - Jia, Yankai

AU - Tao, Ye

AU - Shao, Jinyou

AU - Ding, Yucheng

AU - Jiang, Hongyuan

PY - 2015/5/21

Y1 - 2015/5/21

N2 - Position-controllable trapping of particles on the surface of a bipolar metal strip by induced-charge electroosmotic (ICEO) flow is presented herein. We demonstrate a nonlinear ICEO slip profile on the electrode surface accounting for stable particle trapping behaviors above the double-layer relaxation frequency, while no trapping occurs in the DC limit as a result of a strong upward fluidic drag induced by a linear ICEO slip profile. By extending an AC-flow field effect transistor from the DC limit to the AC field, we reveal that fixed-potential ICEO exceeding RC charging frequency can adjust the particle trapping position flexibly by generating controllable symmetry breaking in a vortex flow pattern. Our results open up new opportunities to manipulate microscopic objects in modern microfluidic systems by using ICEO.

AB - Position-controllable trapping of particles on the surface of a bipolar metal strip by induced-charge electroosmotic (ICEO) flow is presented herein. We demonstrate a nonlinear ICEO slip profile on the electrode surface accounting for stable particle trapping behaviors above the double-layer relaxation frequency, while no trapping occurs in the DC limit as a result of a strong upward fluidic drag induced by a linear ICEO slip profile. By extending an AC-flow field effect transistor from the DC limit to the AC field, we reveal that fixed-potential ICEO exceeding RC charging frequency can adjust the particle trapping position flexibly by generating controllable symmetry breaking in a vortex flow pattern. Our results open up new opportunities to manipulate microscopic objects in modern microfluidic systems by using ICEO.

UR - https://www.scopus.com/pages/publications/84928950849

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DO - 10.1039/c5lc00058k

M3 - 文章

AN - SCOPUS:84928950849

SN - 1473-0197

VL - 15

SP - 2181

EP - 2191

JO - Lab on a Chip

JF - Lab on a Chip

IS - 10

ER -

Induced-charge electroosmotic trapping of particles

Abstract

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