Skip to main navigation Skip to search Skip to main content

In situ observation of ferroelectric domain evolution of (K,Na)NbO3 single crystals during heating

  • CAS - Institute of Physics
  • University of Chinese Academy of Sciences
  • School of Physics, Harbin Institute of Technology
  • Songshan Lake Materials Laboratory

Research output: Contribution to journalArticlepeer-review

Abstract

Since the spontaneous polarization and domain switching is closely related with the physical properties of ferroelectric materials, significant research efforts have been carried out to understand domain switching under external fields. However, investigations on the evolution of ferroelectric domains under thermal fields have comparatively been limited. To elucidate the thermal stability of strain and high pyroelectric coefficient observed in potassium sodium niobate (KNN) single crystals, we conducted in situ TEM studies with heating. Our findings reveal that the strain thermal stability originates from the thermal stability of ferroelectric domains. The nucleation of domain configurations of the tetragonal phase from the orthorhombic phase enhances the pyroelectric effect during the phase transition. Furthermore, near the Curie temperature, we identified an intermediate state exhibiting a labyrinth domain configuration between the cubic and tetragonal phases. Our investigation elucidates the underlying mechanisms behind the thermal properties of the material and advances the understanding of the thermal response of ferroelectric domains.

Original languageEnglish
Article number120316
JournalActa Materialia
Volume279
DOIs
StatePublished - 15 Oct 2024
Externally publishedYes

Keywords

  • (K,Na)NbO single crystals
  • In situ transmission electron microscopy
  • Phase transition
  • Pyroelectric properties
  • Strain thermal stability

Fingerprint

Dive into the research topics of 'In situ observation of ferroelectric domain evolution of (K,Na)NbO3 single crystals during heating'. Together they form a unique fingerprint.

Cite this