In situ measurement of bond resistance varying with process parameters during ultrasonic wedge bonding

Hongjun Ji; Mingyu Li; Chunqing Wang; Han Sur Bang; Hee Seon Bang

doi:10.1016/j.jmatprotec.2008.01.036

In situ measurement of bond resistance varying with process parameters during ultrasonic wedge bonding

Hongjun Ji
, Mingyu Li^*
, Chunqing Wang
, Han Sur Bang
, Hee Seon Bang

^*Corresponding author for this work

School of Integrated Circuits

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Interconnection joints are the signal and power carriers for chip-to-package, and their electrical property determines the whole component/device performances. With the process parameters (P, F and t) varying, the bond resistance was in situ measured during ultrasonic bonding. The influence of the process parameters on the bond resistance was obvious. The measured bond resistance changed in the range from 64.5 mΩ to 72.5 mΩ with the ultrasonic power (P) increasing. The maximum change of the single bond resistance was about 4 mΩ. The causation was analyzed in two aspects, evolution of the bond interface and deformation of the bond wire. Interfacial resistance (R_I) and deformation resistance (R_D) were two primary parts of the variance value.

Original language	English
Pages (from-to)	139-144
Number of pages	6
Journal	Journal of Materials Processing Technology
Volume	209
Issue number	1
DOIs	https://doi.org/10.1016/j.jmatprotec.2008.01.036
State	Published - 1 Jan 2009

Keywords

Bond resistance
Deformation
Interface
Ultrasonic wedge bonding

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10.1016/j.jmatprotec.2008.01.036

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title = "In situ measurement of bond resistance varying with process parameters during ultrasonic wedge bonding",

abstract = "Interconnection joints are the signal and power carriers for chip-to-package, and their electrical property determines the whole component/device performances. With the process parameters (P, F and t) varying, the bond resistance was in situ measured during ultrasonic bonding. The influence of the process parameters on the bond resistance was obvious. The measured bond resistance changed in the range from 64.5 mΩ to 72.5 mΩ with the ultrasonic power (P) increasing. The maximum change of the single bond resistance was about 4 mΩ. The causation was analyzed in two aspects, evolution of the bond interface and deformation of the bond wire. Interfacial resistance (RI) and deformation resistance (RD) were two primary parts of the variance value.",

keywords = "Bond resistance, Deformation, Interface, Ultrasonic wedge bonding",

author = "Hongjun Ji and Mingyu Li and Chunqing Wang and Bang, \{Han Sur\} and Bang, \{Hee Seon\}",

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doi = "10.1016/j.jmatprotec.2008.01.036",

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TY - JOUR

T1 - In situ measurement of bond resistance varying with process parameters during ultrasonic wedge bonding

AU - Ji, Hongjun

AU - Li, Mingyu

AU - Wang, Chunqing

AU - Bang, Han Sur

AU - Bang, Hee Seon

PY - 2009/1/1

Y1 - 2009/1/1

N2 - Interconnection joints are the signal and power carriers for chip-to-package, and their electrical property determines the whole component/device performances. With the process parameters (P, F and t) varying, the bond resistance was in situ measured during ultrasonic bonding. The influence of the process parameters on the bond resistance was obvious. The measured bond resistance changed in the range from 64.5 mΩ to 72.5 mΩ with the ultrasonic power (P) increasing. The maximum change of the single bond resistance was about 4 mΩ. The causation was analyzed in two aspects, evolution of the bond interface and deformation of the bond wire. Interfacial resistance (RI) and deformation resistance (RD) were two primary parts of the variance value.

AB - Interconnection joints are the signal and power carriers for chip-to-package, and their electrical property determines the whole component/device performances. With the process parameters (P, F and t) varying, the bond resistance was in situ measured during ultrasonic bonding. The influence of the process parameters on the bond resistance was obvious. The measured bond resistance changed in the range from 64.5 mΩ to 72.5 mΩ with the ultrasonic power (P) increasing. The maximum change of the single bond resistance was about 4 mΩ. The causation was analyzed in two aspects, evolution of the bond interface and deformation of the bond wire. Interfacial resistance (RI) and deformation resistance (RD) were two primary parts of the variance value.

KW - Bond resistance

KW - Deformation

KW - Interface

KW - Ultrasonic wedge bonding

UR - https://www.scopus.com/pages/publications/54049130117

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DO - 10.1016/j.jmatprotec.2008.01.036

M3 - 文章

AN - SCOPUS:54049130117

SN - 0924-0136

VL - 209

SP - 139

EP - 144

JO - Journal of Materials Processing Technology

JF - Journal of Materials Processing Technology

IS - 1

ER -

In situ measurement of bond resistance varying with process parameters during ultrasonic wedge bonding

Abstract

Keywords

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