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In situ investigation of nanometric cutting of 3C-SiC using scanning electron microscope

  • Dongyu Tian
  • , Zongwei Xu*
  • , Lei Liu
  • , Zhanqi Zhou
  • , Junjie Zhang*
  • , Xuesen Zhao
  • , Alexander Hartmaier
  • , Bing Liu
  • , Le Song
  • , Xichun Luo
  • *Corresponding author for this work
  • Tianjin University
  • Ruhr University Bochum
  • Tianjin University of Commerce
  • University of Strathclyde

Research output: Contribution to journalArticlepeer-review

Abstract

Experimentally revealing the nanometric deformation behavior of 3C-SiC is challenging due to its ultra-small feature size for brittle-to-ductile transition. In the present work, we elucidated the nanometric cutting mechanisms of 3C-SiC by performing in situ nanometric cutting experiments under scanning electron microscope (SEM), as well as post-characterization by electron back-scattered diffraction (EBSD) and transmission electron microscopy (TEM). In particular, a new method based on the combination of image processing technology and SEM online observation was proposed to achieve in situ measurement of cutting force with an uncertainty less than 1 mN. Furthermore, the cutting cross-section was characterized by atomic force microscope (AFM) to access the specific cutting energy. The results revealed that the specific cutting energy increase non-linearly with the decrease of cutting depth due to the size effect of cutting tool in nanometric cutting. The high-pressure phase transformation (HPPT) may play the major role in 3C-SiC ductile machining under the parameters of this experiment.

Original languageEnglish
Pages (from-to)2299-2312
Number of pages14
JournalInternational Journal of Advanced Manufacturing Technology
Volume115
Issue number7-8
DOIs
StatePublished - Aug 2021

Keywords

  • Cubic silicon carbide
  • Diamond cutting
  • In situ SEM observation
  • Phase transformation
  • Surface integrity

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