In situ characterization of initial growth of HfO2

L. Wang; Paul K. Chu; K. Xue; J. B. Xu

doi:10.1063/1.3073863

In situ characterization of initial growth of HfO₂

L. Wang^*
, Paul K. Chu
, K. Xue
, J. B. Xu

^*Corresponding author for this work

City University of Hong Kong
Chinese University of Hong Kong

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The initial growth of HfO₂ on Si (111) is monitored in situ by ultrahigh vacuum (UHV) scanning probe microscopy. UHV scanning tunneling microscopy and UHV atomic force microscopy reveal the topography of HfO ₂ films in the initial stage. The chemical composition is further confirmed by x-ray photoelectron spectroscopy. Scanning tunneling spectroscopy is utilized to inspect the evolution of the bandgap. When the film thickness is less than 0.6 nm, the bandgap of HfO₂ is not completely formed. A continuous usable HfO₂ film with thickness of about 1.2 nm is presented in this work.

Original language	English
Article number	032904
Journal	Applied Physics Letters
Volume	94
Issue number	3
DOIs	https://doi.org/10.1063/1.3073863
State	Published - 2009
Externally published	Yes

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title = "In situ characterization of initial growth of HfO2",

abstract = "The initial growth of HfO2 on Si (111) is monitored in situ by ultrahigh vacuum (UHV) scanning probe microscopy. UHV scanning tunneling microscopy and UHV atomic force microscopy reveal the topography of HfO 2 films in the initial stage. The chemical composition is further confirmed by x-ray photoelectron spectroscopy. Scanning tunneling spectroscopy is utilized to inspect the evolution of the bandgap. When the film thickness is less than 0.6 nm, the bandgap of HfO2 is not completely formed. A continuous usable HfO2 film with thickness of about 1.2 nm is presented in this work.",

author = "L. Wang and Chu, \{Paul K.\} and K. Xue and Xu, \{J. B.\}",

year = "2009",

doi = "10.1063/1.3073863",

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volume = "94",

journal = "Applied Physics Letters",

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T1 - In situ characterization of initial growth of HfO2

AU - Wang, L.

AU - Chu, Paul K.

AU - Xue, K.

AU - Xu, J. B.

PY - 2009

Y1 - 2009

N2 - The initial growth of HfO2 on Si (111) is monitored in situ by ultrahigh vacuum (UHV) scanning probe microscopy. UHV scanning tunneling microscopy and UHV atomic force microscopy reveal the topography of HfO 2 films in the initial stage. The chemical composition is further confirmed by x-ray photoelectron spectroscopy. Scanning tunneling spectroscopy is utilized to inspect the evolution of the bandgap. When the film thickness is less than 0.6 nm, the bandgap of HfO2 is not completely formed. A continuous usable HfO2 film with thickness of about 1.2 nm is presented in this work.

AB - The initial growth of HfO2 on Si (111) is monitored in situ by ultrahigh vacuum (UHV) scanning probe microscopy. UHV scanning tunneling microscopy and UHV atomic force microscopy reveal the topography of HfO 2 films in the initial stage. The chemical composition is further confirmed by x-ray photoelectron spectroscopy. Scanning tunneling spectroscopy is utilized to inspect the evolution of the bandgap. When the film thickness is less than 0.6 nm, the bandgap of HfO2 is not completely formed. A continuous usable HfO2 film with thickness of about 1.2 nm is presented in this work.

UR - https://www.scopus.com/pages/publications/58849123344

U2 - 10.1063/1.3073863

DO - 10.1063/1.3073863

M3 - 文章

AN - SCOPUS:58849123344

SN - 0003-6951

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 032904

ER -

In situ characterization of initial growth of HfO₂

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