Improvement of thermal stability of p-type ZnO:(Al,N) fabricated by oxidizing Zn3N2:Al thin films

Y. F. Wang; D. Y. Song; L. Li; B. S. Li; A. Shen; Y. Sui

doi:10.1002/pssc.201510164

Improvement of thermal stability of p-type ZnO:(Al,N) fabricated by oxidizing Zn₃N₂:Al thin films

Y. F. Wang
, D. Y. Song
, L. Li
, B. S. Li^*
, A. Shen
, Y. Sui

^*Corresponding author for this work

School of Physics

Harbin Institute of Technology
City University of New York

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The authors report the fabrication of p-type ZnO thin films with improved thermal stability. The p-type ZnO thin films were obtained by oxidizing Zn₃N₂:Al thin films in an oxygen ambient. Both Zn₃N₂:Al and Zn₃N₂ thin films were deposited on fused silica substrates at 100 °C by megnetron sputtering. X-ray diffraction (XRD) measurements showed that the ZnO thin films obtained from by oxiding Zn₃N₂:Al, have preferred (002) orientation. On the other hand, ZnO films obtained by oxidizing Zn₃N₂ are polycrystalline. The optical band gap of ZnO (3.294 eV) obtained by annealing Zn₃N₂:Al thin films is narrower than that of the ZnO (3.31 eV) obtained by annealing Zn₃N₂. P-type ZnO films were formed by annealing Zn₃N₂:Al at temperatures above 600 °C. A maximum hole density of 1.4 x 10¹⁶ cm^-3 was obtained in a film annealed at 800 °C. In contrast, only n-type ZnO can be produced from oxidizing Zn₃N₂. Our results indicate that the Al can stabilize the nitrogen acceptors in ZnO thin films.

Original language	English
Pages (from-to)	585-589
Number of pages	5
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	13
Issue number	7-9
DOIs	https://doi.org/10.1002/pssc.201510164
State	Published - 1 Jul 2016

Keywords

ZnN:Al thin film
optical band gap
p-ZnO
thermal annealing

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@article{5c5720319a374608b045db8719d3edf7,

title = "Improvement of thermal stability of p-type ZnO:(Al,N) fabricated by oxidizing Zn3N2:Al thin films",

abstract = "The authors report the fabrication of p-type ZnO thin films with improved thermal stability. The p-type ZnO thin films were obtained by oxidizing Zn3N2:Al thin films in an oxygen ambient. Both Zn3N2:Al and Zn3N2 thin films were deposited on fused silica substrates at 100 °C by megnetron sputtering. X-ray diffraction (XRD) measurements showed that the ZnO thin films obtained from by oxiding Zn3N2:Al, have preferred (002) orientation. On the other hand, ZnO films obtained by oxidizing Zn3N2 are polycrystalline. The optical band gap of ZnO (3.294 eV) obtained by annealing Zn3N2:Al thin films is narrower than that of the ZnO (3.31 eV) obtained by annealing Zn3N2. P-type ZnO films were formed by annealing Zn3N2:Al at temperatures above 600 °C. A maximum hole density of 1.4 x 1016 cm-3 was obtained in a film annealed at 800 °C. In contrast, only n-type ZnO can be produced from oxidizing Zn3N2. Our results indicate that the Al can stabilize the nitrogen acceptors in ZnO thin films.",

keywords = "ZnN:Al thin film, optical band gap, p-ZnO, thermal annealing",

author = "Wang, \{Y. F.\} and Song, \{D. Y.\} and L. Li and Li, \{B. S.\} and A. Shen and Y. Sui",

note = "Publisher Copyright: Copyright {\textcopyright} 2016 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim",

year = "2016",

month = jul,

day = "1",

doi = "10.1002/pssc.201510164",

language = "英语",

volume = "13",

pages = "585--589",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "7-9",

}

TY - JOUR

T1 - Improvement of thermal stability of p-type ZnO:(Al,N) fabricated by oxidizing Zn3N2:Al thin films

AU - Wang, Y. F.

AU - Song, D. Y.

AU - Li, L.

AU - Li, B. S.

AU - Shen, A.

AU - Sui, Y.

PY - 2016/7/1

Y1 - 2016/7/1

N2 - The authors report the fabrication of p-type ZnO thin films with improved thermal stability. The p-type ZnO thin films were obtained by oxidizing Zn3N2:Al thin films in an oxygen ambient. Both Zn3N2:Al and Zn3N2 thin films were deposited on fused silica substrates at 100 °C by megnetron sputtering. X-ray diffraction (XRD) measurements showed that the ZnO thin films obtained from by oxiding Zn3N2:Al, have preferred (002) orientation. On the other hand, ZnO films obtained by oxidizing Zn3N2 are polycrystalline. The optical band gap of ZnO (3.294 eV) obtained by annealing Zn3N2:Al thin films is narrower than that of the ZnO (3.31 eV) obtained by annealing Zn3N2. P-type ZnO films were formed by annealing Zn3N2:Al at temperatures above 600 °C. A maximum hole density of 1.4 x 1016 cm-3 was obtained in a film annealed at 800 °C. In contrast, only n-type ZnO can be produced from oxidizing Zn3N2. Our results indicate that the Al can stabilize the nitrogen acceptors in ZnO thin films.

AB - The authors report the fabrication of p-type ZnO thin films with improved thermal stability. The p-type ZnO thin films were obtained by oxidizing Zn3N2:Al thin films in an oxygen ambient. Both Zn3N2:Al and Zn3N2 thin films were deposited on fused silica substrates at 100 °C by megnetron sputtering. X-ray diffraction (XRD) measurements showed that the ZnO thin films obtained from by oxiding Zn3N2:Al, have preferred (002) orientation. On the other hand, ZnO films obtained by oxidizing Zn3N2 are polycrystalline. The optical band gap of ZnO (3.294 eV) obtained by annealing Zn3N2:Al thin films is narrower than that of the ZnO (3.31 eV) obtained by annealing Zn3N2. P-type ZnO films were formed by annealing Zn3N2:Al at temperatures above 600 °C. A maximum hole density of 1.4 x 1016 cm-3 was obtained in a film annealed at 800 °C. In contrast, only n-type ZnO can be produced from oxidizing Zn3N2. Our results indicate that the Al can stabilize the nitrogen acceptors in ZnO thin films.

KW - ZnN:Al thin film

KW - optical band gap

KW - p-ZnO

KW - thermal annealing

UR - https://www.scopus.com/pages/publications/84975745597

U2 - 10.1002/pssc.201510164

DO - 10.1002/pssc.201510164

M3 - 文章

AN - SCOPUS:84975745597

SN - 1862-6351

VL - 13

SP - 585

EP - 589

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 7-9

ER -

Improvement of thermal stability of p-type ZnO:(Al,N) fabricated by oxidizing Zn₃N₂:Al thin films

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Keywords

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