Improved work function of preferentially oriented indium oxide films induced by the plasma exposure technique

The preferentially oriented In₂O₃ thin films were prepared on glass substrates by conventional magnetron sputtering with Ar⁺ plasma exposure at room temperature. Based on the x-ray diffraction, x-ray photoelectron spectroscopy, and UV photoelectron spectroscopy results, it was found that the Ar⁺ plasma exposure not only enhanced the low-temperature crystallization of In₂O₃ thin films, but also led to a dramatic improvement in the work function. Furthermore, it demonstrated that the shift mechanism of the work function in In₂O₃ thin films mainly combined with theelimination of oxygen defects and the change of the preferential orientation of In₂O₃ film surface. [Figure not available: see fulltext.]