Improved stability of dielectric/metal/dielectric-structured transparent conductive films with the insertion of Ni layer under thermal oxidation environment

Zhibo Zhang; Xinyu Zhang; Liangge Xu; Yanan Yang; Pingping Min; Ruicong Zhang; Lei Yang; Andrey Bolshakov; Jiaqi Zhu

doi:10.1016/j.matlet.2020.128844

Improved stability of dielectric/metal/dielectric-structured transparent conductive films with the insertion of Ni layer under thermal oxidation environment

Zhibo Zhang
, Xinyu Zhang
, Liangge Xu^*
, Yanan Yang
, Pingping Min
, Ruicong Zhang
, Lei Yang
, Andrey Bolshakov
, Jiaqi Zhu

^*Corresponding author for this work

National Key Laboratory of Science and Technology on Advanced Composites in Special Environment
Harbin Institute of Technology
Ministry of Education of the People's Republic of China

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Dielectric/metal/dielectric-structured transparent conductive films are prone to structural and functional failures under thermal oxidation environment. Herein, a Ni layer was employed to improve the photoelectric stability of AZO/Ag/AZO multilayer films. The AZO/Ni/Ag/AZO film exhibited a transmittance of 75%, surface resistance of ~7 Ω/sq, and stable structure after thermal oxidation treatment at 500 °C. The visible light transmittance, surface resistance, and figure of merit values of the AZO/Ag/AZO and AZO/Ni/Ag/AZO films were determined after high-temperature treatment in ambient air. The diffusion of Ag was effectively inhibited by the Ni layer, and the photoelectric stability of AZO/Ag/AZO films was improved under thermal environment.

Original language	English
Article number	128844
Journal	Materials Letters
Volume	282
DOIs	https://doi.org/10.1016/j.matlet.2020.128844
State	Published - 1 Jan 2021
Externally published	Yes

Keywords

Optical materials and properties
Photoelectric stability
Sputtering
Thin films

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10.1016/j.matlet.2020.128844

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@article{dc5d5e6d08b34786988d46a619e74dff,

title = "Improved stability of dielectric/metal/dielectric-structured transparent conductive films with the insertion of Ni layer under thermal oxidation environment",

abstract = "Dielectric/metal/dielectric-structured transparent conductive films are prone to structural and functional failures under thermal oxidation environment. Herein, a Ni layer was employed to improve the photoelectric stability of AZO/Ag/AZO multilayer films. The AZO/Ni/Ag/AZO film exhibited a transmittance of 75\%, surface resistance of \textasciitilde{}7 Ω/sq, and stable structure after thermal oxidation treatment at 500 °C. The visible light transmittance, surface resistance, and figure of merit values of the AZO/Ag/AZO and AZO/Ni/Ag/AZO films were determined after high-temperature treatment in ambient air. The diffusion of Ag was effectively inhibited by the Ni layer, and the photoelectric stability of AZO/Ag/AZO films was improved under thermal environment.",

keywords = "Optical materials and properties, Photoelectric stability, Sputtering, Thin films",

author = "Zhibo Zhang and Xinyu Zhang and Liangge Xu and Yanan Yang and Pingping Min and Ruicong Zhang and Lei Yang and Andrey Bolshakov and Jiaqi Zhu",

note = "Publisher Copyright: {\textcopyright} 2020",

year = "2021",

month = jan,

day = "1",

doi = "10.1016/j.matlet.2020.128844",

language = "英语",

volume = "282",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Improved stability of dielectric/metal/dielectric-structured transparent conductive films with the insertion of Ni layer under thermal oxidation environment

AU - Zhang, Zhibo

AU - Zhang, Xinyu

AU - Xu, Liangge

AU - Yang, Yanan

AU - Min, Pingping

AU - Zhang, Ruicong

AU - Yang, Lei

AU - Bolshakov, Andrey

AU - Zhu, Jiaqi

PY - 2021/1/1

Y1 - 2021/1/1

N2 - Dielectric/metal/dielectric-structured transparent conductive films are prone to structural and functional failures under thermal oxidation environment. Herein, a Ni layer was employed to improve the photoelectric stability of AZO/Ag/AZO multilayer films. The AZO/Ni/Ag/AZO film exhibited a transmittance of 75%, surface resistance of ~7 Ω/sq, and stable structure after thermal oxidation treatment at 500 °C. The visible light transmittance, surface resistance, and figure of merit values of the AZO/Ag/AZO and AZO/Ni/Ag/AZO films were determined after high-temperature treatment in ambient air. The diffusion of Ag was effectively inhibited by the Ni layer, and the photoelectric stability of AZO/Ag/AZO films was improved under thermal environment.

AB - Dielectric/metal/dielectric-structured transparent conductive films are prone to structural and functional failures under thermal oxidation environment. Herein, a Ni layer was employed to improve the photoelectric stability of AZO/Ag/AZO multilayer films. The AZO/Ni/Ag/AZO film exhibited a transmittance of 75%, surface resistance of ~7 Ω/sq, and stable structure after thermal oxidation treatment at 500 °C. The visible light transmittance, surface resistance, and figure of merit values of the AZO/Ag/AZO and AZO/Ni/Ag/AZO films were determined after high-temperature treatment in ambient air. The diffusion of Ag was effectively inhibited by the Ni layer, and the photoelectric stability of AZO/Ag/AZO films was improved under thermal environment.

KW - Optical materials and properties

KW - Photoelectric stability

KW - Sputtering

KW - Thin films

UR - https://www.scopus.com/pages/publications/85092922238

U2 - 10.1016/j.matlet.2020.128844

DO - 10.1016/j.matlet.2020.128844

M3 - 文章

AN - SCOPUS:85092922238

SN - 0167-577X

VL - 282

JO - Materials Letters

JF - Materials Letters

M1 - 128844

ER -

Improved stability of dielectric/metal/dielectric-structured transparent conductive films with the insertion of Ni layer under thermal oxidation environment

Abstract

Keywords

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