Improved interface characteristics of Mo/4H-SiC schottky contact

In this work, we studied different proportions of Mo-C alloy Schottky contacts. Compare the electrical characteristics and SiC interface with the Mo/4H-SiC based diodes. The Schottky interface obtained was studied at different annealing temperatures and its electrical properties were analyzed. Analyze electrical performance through temperature-related current–voltage (I-V) and capacitance–voltage (C-V) measurements. The experimental results showed that the metallic Mo-C alloy (9:1) Schottky contact had good stability and interface characteristics at high annealing temperatures. When annealing at 900 °C, its ideality factor approached 1 and the barrier height reached 1.04 eV. The TEM images also indicated that the Mo-C alloy reduced the solid-state reaction, which improved the inhomogeneity of the Schottky interface.