TY - GEN
T1 - IMC evolution and reliability of lead-free solder bump formed by induction self heat reflow
AU - Li, Mingyu
AU - Xu, Hongbo
AU - Wang, Chunqing
AU - Bang, Han Sur
AU - Bang, Hee Seon
PY - 2005
Y1 - 2005
N2 - Induction Self Heat Reflow (ISHR) technology, which has the advantages of 3-D selective heating and high heating speed, can solve the problems which can't be controlled in traditional reflow technologies, such as inhomogeneous heating of ball grid array (different bumps), simultaneous heating of chip and carrier with solder ball, etc., which have been increasingly serious with the development of packaging technology. In this paper, the results of the aging experiment and bump shear experiment of Sn3.5Ag and Sn3Ag0.5Cu solder bumps reflowed on the Au/Ni/Cu pad respectively are used for evaluating the reliability of the bumps manufactured through ISHR. It is shown that the bumps can supply sufficient shear strength for use. Three kinds of different shear failure behaviors controlled by different failure mechanisms are observed. During the aging time a continual pure Ni3Sn4 layer exists at the interface of Sn3.5Ag solder bumps, and dispersed (Aux,Ni1-x)Sn 4 inside solder matrix. Two quaternary Au-Ni-Cu-Sn IMC layers, (Cu,Ni,Au)3Sn close to Ni layer and (Cu,Ni,Au)6Sn 5 close to solder bulk, existed at the interface of the Sn3.0Ag0.5Cu bump after aging. IMC thickness increased linearly with square root of aging time. The IMC growth was a diffusion controlled process.
AB - Induction Self Heat Reflow (ISHR) technology, which has the advantages of 3-D selective heating and high heating speed, can solve the problems which can't be controlled in traditional reflow technologies, such as inhomogeneous heating of ball grid array (different bumps), simultaneous heating of chip and carrier with solder ball, etc., which have been increasingly serious with the development of packaging technology. In this paper, the results of the aging experiment and bump shear experiment of Sn3.5Ag and Sn3Ag0.5Cu solder bumps reflowed on the Au/Ni/Cu pad respectively are used for evaluating the reliability of the bumps manufactured through ISHR. It is shown that the bumps can supply sufficient shear strength for use. Three kinds of different shear failure behaviors controlled by different failure mechanisms are observed. During the aging time a continual pure Ni3Sn4 layer exists at the interface of Sn3.5Ag solder bumps, and dispersed (Aux,Ni1-x)Sn 4 inside solder matrix. Two quaternary Au-Ni-Cu-Sn IMC layers, (Cu,Ni,Au)3Sn close to Ni layer and (Cu,Ni,Au)6Sn 5 close to solder bulk, existed at the interface of the Sn3.0Ag0.5Cu bump after aging. IMC thickness increased linearly with square root of aging time. The IMC growth was a diffusion controlled process.
UR - https://www.scopus.com/pages/publications/33846327574
U2 - 10.1109/ICEPT.2005.1564651
DO - 10.1109/ICEPT.2005.1564651
M3 - 会议稿件
AN - SCOPUS:33846327574
SN - 0780394496
SN - 9780780394490
T3 - 2005 6th International Conference on Electronics Packaging Technology
BT - 2005 6th International Conference on Electronics Packaging Technology
T2 - 2005 6th International Conference on Electronics Packaging Technology
Y2 - 30 August 2005 through 2 September 2005
ER -