Identification of Ag37Sn33Te30 phase-change films for optical data storage

Xue Ru Zhang

doi:10.1088/0256-307X/22/6/038

Identification of Ag₃₇Sn₃₃Te₃₀ phase-change films for optical data storage

Xue Ru Zhang

School of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

The Ag₃₇Sn₃₃Te₃₀ film has been investigated to determine its suitability as phase change optical recording alloy based on static tester and atomic force microscopy measurements. Switching properties and the recording bit topography of the film are studied. With a writing pulse of power 2.5 mW, width 10 μs, and an erasure pulse of power 0.25 mW, width 10 μs, optical contrast of 31.8% is obtained. Re-crystallization experiments identify the Ag₃₇Sn ₃₃Te₃₀ film as a suitable phase change material for optical data storage with a complete erasure time of 1.1 μs at low erasure power.

Original language	English
Pages (from-to)	1436-1438
Number of pages	3
Journal	Chinese Physics Letters
Volume	22
Issue number	6
DOIs	https://doi.org/10.1088/0256-307X/22/6/038
State	Published - 1 Jun 2005

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title = "Identification of Ag37Sn33Te30 phase-change films for optical data storage",

abstract = "The Ag37Sn33Te30 film has been investigated to determine its suitability as phase change optical recording alloy based on static tester and atomic force microscopy measurements. Switching properties and the recording bit topography of the film are studied. With a writing pulse of power 2.5 mW, width 10 μs, and an erasure pulse of power 0.25 mW, width 10 μs, optical contrast of 31.8\% is obtained. Re-crystallization experiments identify the Ag37Sn 33Te30 film as a suitable phase change material for optical data storage with a complete erasure time of 1.1 μs at low erasure power.",

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AB - The Ag37Sn33Te30 film has been investigated to determine its suitability as phase change optical recording alloy based on static tester and atomic force microscopy measurements. Switching properties and the recording bit topography of the film are studied. With a writing pulse of power 2.5 mW, width 10 μs, and an erasure pulse of power 0.25 mW, width 10 μs, optical contrast of 31.8% is obtained. Re-crystallization experiments identify the Ag37Sn 33Te30 film as a suitable phase change material for optical data storage with a complete erasure time of 1.1 μs at low erasure power.

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Identification of Ag₃₇Sn₃₃Te₃₀ phase-change films for optical data storage

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