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Ideal Photothermal Materials Based on Ge Subwavelength Structure

  • Jingjun Wu
  • , Kaixuan Wang
  • , Cong Wei
  • , Jun Ma*
  • , Hongbo Xu*
  • , Wanguo Zheng
  • , Rihong Zhu
  • *Corresponding author for this work
  • Nanjing University of Science and Technology
  • School of Chemistry and Chemical Engineering, Harbin Institute of Technology

Research output: Contribution to journalArticlepeer-review

Abstract

Photothermal materials often prioritize solar absorption while neglecting thermal radiation losses, which diminishes thermal radiation conversion efficiency. This study addresses this gap by introducing a germanium (Ge) subwavelength structure (SWS) designed to optimize both solar absorption and infrared emissivity. Using a self-masked reactive ion etching (RIE) technique, we achieved a peak absorption of 98.8% within the 300 nm to 1800 nm range, with an infrared emissivity as low as 0.32. Under solar illumination of 1000 W/m2, the structure’s temperature increased by 50 °C, generating a heating power of 800 W/m2. Additionally, it demonstrated good mechanical and thermal stability at high temperatures and possessed a hydrophobic angle of 132°, ensuring effective self-cleaning. These characteristics make the Ge SWS suitable for application in solar panels, displays, sensors, and other optoelectronic devices.

Original languageEnglish
Article number5008
JournalMolecules
Volume29
Issue number21
DOIs
StatePublished - Nov 2024
Externally publishedYes

Keywords

  • RIE self-masking technique
  • photothermal absorption
  • subwavelength structure

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