Hysteresis suppression in self-assembled single-wall nanotube field effect transistors

P. Hu; C. Zhang; A. Fasoli; V. Scardaci; S. Pisana; T. Hasan; J. Robertson; W. I. Milne; A. C. Ferrari

doi:10.1016/j.physe.2007.11.034

Hysteresis suppression in self-assembled single-wall nanotube field effect transistors

P. Hu^*
, C. Zhang
, A. Fasoli
, V. Scardaci
, S. Pisana
, T. Hasan
, J. Robertson
, W. I. Milne
, A. C. Ferrari

^*Corresponding author for this work

University of Cambridge

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

We present a technique for hysteresis suppression in single-wall nanotube field effect transistors (SWNT-FETs) using chemical functionalization. We selectively modify the electrode surfaces and the device channel area with self-assembled monolayers (SAMs) of octanethiol and aminopropyltriethoxysilane (APTES), respectively. These can efficiently prevent surface adsorption of water molecules. We show that hysteresis is suppressed, with a 15 times decrease in hysteresis gap compared to the conventional SWNT-FETs on bare SiO₂/Si.

Original language	English
Pages (from-to)	2278-2282
Number of pages	5
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	40
Issue number	7
DOIs	https://doi.org/10.1016/j.physe.2007.11.034
State	Published - May 2008
Externally published	Yes

Keywords

Hysteresis
Nanotubes
Transistor

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10.1016/j.physe.2007.11.034

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title = "Hysteresis suppression in self-assembled single-wall nanotube field effect transistors",

abstract = "We present a technique for hysteresis suppression in single-wall nanotube field effect transistors (SWNT-FETs) using chemical functionalization. We selectively modify the electrode surfaces and the device channel area with self-assembled monolayers (SAMs) of octanethiol and aminopropyltriethoxysilane (APTES), respectively. These can efficiently prevent surface adsorption of water molecules. We show that hysteresis is suppressed, with a 15 times decrease in hysteresis gap compared to the conventional SWNT-FETs on bare SiO2/Si.",

keywords = "Hysteresis, Nanotubes, Transistor",

author = "P. Hu and C. Zhang and A. Fasoli and V. Scardaci and S. Pisana and T. Hasan and J. Robertson and Milne, \{W. I.\} and Ferrari, \{A. C.\}",

year = "2008",

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doi = "10.1016/j.physe.2007.11.034",

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T1 - Hysteresis suppression in self-assembled single-wall nanotube field effect transistors

AU - Hu, P.

AU - Zhang, C.

AU - Fasoli, A.

AU - Scardaci, V.

AU - Pisana, S.

AU - Hasan, T.

AU - Robertson, J.

AU - Milne, W. I.

AU - Ferrari, A. C.

PY - 2008/5

Y1 - 2008/5

N2 - We present a technique for hysteresis suppression in single-wall nanotube field effect transistors (SWNT-FETs) using chemical functionalization. We selectively modify the electrode surfaces and the device channel area with self-assembled monolayers (SAMs) of octanethiol and aminopropyltriethoxysilane (APTES), respectively. These can efficiently prevent surface adsorption of water molecules. We show that hysteresis is suppressed, with a 15 times decrease in hysteresis gap compared to the conventional SWNT-FETs on bare SiO2/Si.

AB - We present a technique for hysteresis suppression in single-wall nanotube field effect transistors (SWNT-FETs) using chemical functionalization. We selectively modify the electrode surfaces and the device channel area with self-assembled monolayers (SAMs) of octanethiol and aminopropyltriethoxysilane (APTES), respectively. These can efficiently prevent surface adsorption of water molecules. We show that hysteresis is suppressed, with a 15 times decrease in hysteresis gap compared to the conventional SWNT-FETs on bare SiO2/Si.

KW - Hysteresis

KW - Nanotubes

KW - Transistor

UR - https://www.scopus.com/pages/publications/43849100717

U2 - 10.1016/j.physe.2007.11.034

DO - 10.1016/j.physe.2007.11.034

M3 - 文章

AN - SCOPUS:43849100717

SN - 1386-9477

VL - 40

SP - 2278

EP - 2282

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 7

ER -

Hysteresis suppression in self-assembled single-wall nanotube field effect transistors

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Keywords

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