Horizontally suspended carbon nanotube bundles patterned on silicon trench sidewalls

Jingyu Lu; Jianmin Miao

doi:10.1109/INEC.2013.6466094

Horizontally suspended carbon nanotube bundles patterned on silicon trench sidewalls

Jingyu Lu^*
, Jianmin Miao

^*Corresponding author for this work

Nanyang Technological University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Arrays of horizontally suspended carbon nanotube (HSCNT) bundles were grown from selected silicon trench sidewalls with help of micromachining technologies. The key process is the patterning of an iron (Fe) catalyst layer onto selected silicon trench sidewalls through a shadow mask placed on top of silicon trenches by the tilted electron beam evaporation technique. These HSCNTs bundle arrays are promising in micro/nano electronics applications.

Original language	English
Title of host publication	Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
Pages	514-516
Number of pages	3
DOIs	https://doi.org/10.1109/INEC.2013.6466094
State	Published - 2013
Externally published	Yes
Event	2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 - Singapore, Singapore Duration: 2 Jan 2013 → 4 Jan 2013

Publication series

Name	Proceedings - Winter Simulation Conference
ISSN (Print)	0891-7736

Conference

Conference	2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
Country/Territory	Singapore
City	Singapore
Period	2/01/13 → 4/01/13

Keywords

carbon nanotube
horizontal growth

Access to Document

10.1109/INEC.2013.6466094

Cite this

@inproceedings{e4bfe2c47c8c475b95f8ed9e7c7bf24f,

title = "Horizontally suspended carbon nanotube bundles patterned on silicon trench sidewalls",

abstract = "Arrays of horizontally suspended carbon nanotube (HSCNT) bundles were grown from selected silicon trench sidewalls with help of micromachining technologies. The key process is the patterning of an iron (Fe) catalyst layer onto selected silicon trench sidewalls through a shadow mask placed on top of silicon trenches by the tilted electron beam evaporation technique. These HSCNTs bundle arrays are promising in micro/nano electronics applications.",

keywords = "carbon nanotube, horizontal growth",

author = "Jingyu Lu and Jianmin Miao",

year = "2013",

doi = "10.1109/INEC.2013.6466094",

language = "英语",

isbn = "9781467348416",

series = "Proceedings - Winter Simulation Conference",

pages = "514--516",

booktitle = "Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013",

note = "2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 ; Conference date: 02-01-2013 Through 04-01-2013",

}

Lu, J & Miao, J 2013, Horizontally suspended carbon nanotube bundles patterned on silicon trench sidewalls. in Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013., 6466094, Proceedings - Winter Simulation Conference, pp. 514-516, 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013, Singapore, Singapore, 2/01/13. https://doi.org/10.1109/INEC.2013.6466094

Horizontally suspended carbon nanotube bundles patterned on silicon trench sidewalls. / Lu, Jingyu; Miao, Jianmin.
Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013. 2013. p. 514-516 6466094 (Proceedings - Winter Simulation Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Miao, Jianmin

PY - 2013

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N2 - Arrays of horizontally suspended carbon nanotube (HSCNT) bundles were grown from selected silicon trench sidewalls with help of micromachining technologies. The key process is the patterning of an iron (Fe) catalyst layer onto selected silicon trench sidewalls through a shadow mask placed on top of silicon trenches by the tilted electron beam evaporation technique. These HSCNTs bundle arrays are promising in micro/nano electronics applications.

AB - Arrays of horizontally suspended carbon nanotube (HSCNT) bundles were grown from selected silicon trench sidewalls with help of micromachining technologies. The key process is the patterning of an iron (Fe) catalyst layer onto selected silicon trench sidewalls through a shadow mask placed on top of silicon trenches by the tilted electron beam evaporation technique. These HSCNTs bundle arrays are promising in micro/nano electronics applications.

KW - carbon nanotube

KW - horizontal growth

UR - https://www.scopus.com/pages/publications/84874784522

U2 - 10.1109/INEC.2013.6466094

DO - 10.1109/INEC.2013.6466094

M3 - 会议稿件

AN - SCOPUS:84874784522

SN - 9781467348416

T3 - Proceedings - Winter Simulation Conference

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BT - Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013

T2 - 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013

Y2 - 2 January 2013 through 4 January 2013

ER -

Horizontally suspended carbon nanotube bundles patterned on silicon trench sidewalls

Abstract

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Keywords

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