High voltage pulser with a fast fall-time for plasma immersion ion implantation

Zongtao Zhu; Chunzhi Gong; Xiubo Tian; Shiqin Yang; Ricky K.Y. Fu; Paul K. Chu

doi:10.1063/1.3575320

High voltage pulser with a fast fall-time for plasma immersion ion implantation

Zongtao Zhu
, Chunzhi Gong
, Xiubo Tian^*
, Shiqin Yang
, Ricky K.Y. Fu
, Paul K. Chu

^*Corresponding author for this work

Harbin Institute of Technology
City University of Hong Kong

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A novel high voltage (HV) modulator that offers a short fall time to minimize sputtering effects and allow more precise control of the incident ion fluence in plasma immersion ion implantation is described. The use of 36 insulated-gate bipolar transistors in the 30 kV hard-tube pulser reduces the HV fall time to 3.5 s, compared to a fall time of 80 s if a pull-down resister is used. The voltage balance is achieved by a voltage-balancing resistor, clamped capacitance, and the synchronization of drive signals. Compared to the traditional method employing a pull-down resister or an additional hard tube, our design consumes less power and is more economical and reliable.

Original language	English
Article number	045102
Journal	Review of Scientific Instruments
Volume	82
Issue number	4
DOIs	https://doi.org/10.1063/1.3575320
State	Published - Apr 2011
Externally published	Yes

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10.1063/1.3575320

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@article{1f565219ec064d168b46c01d0ff47ddf,

title = "High voltage pulser with a fast fall-time for plasma immersion ion implantation",

abstract = "A novel high voltage (HV) modulator that offers a short fall time to minimize sputtering effects and allow more precise control of the incident ion fluence in plasma immersion ion implantation is described. The use of 36 insulated-gate bipolar transistors in the 30 kV hard-tube pulser reduces the HV fall time to 3.5 s, compared to a fall time of 80 s if a pull-down resister is used. The voltage balance is achieved by a voltage-balancing resistor, clamped capacitance, and the synchronization of drive signals. Compared to the traditional method employing a pull-down resister or an additional hard tube, our design consumes less power and is more economical and reliable.",

author = "Zongtao Zhu and Chunzhi Gong and Xiubo Tian and Shiqin Yang and Fu, \{Ricky K.Y.\} and Chu, \{Paul K.\}",

year = "2011",

month = apr,

doi = "10.1063/1.3575320",

language = "英语",

volume = "82",

journal = "Review of Scientific Instruments",

issn = "0034-6748",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - High voltage pulser with a fast fall-time for plasma immersion ion implantation

AU - Zhu, Zongtao

AU - Gong, Chunzhi

AU - Tian, Xiubo

AU - Yang, Shiqin

AU - Fu, Ricky K.Y.

AU - Chu, Paul K.

PY - 2011/4

Y1 - 2011/4

N2 - A novel high voltage (HV) modulator that offers a short fall time to minimize sputtering effects and allow more precise control of the incident ion fluence in plasma immersion ion implantation is described. The use of 36 insulated-gate bipolar transistors in the 30 kV hard-tube pulser reduces the HV fall time to 3.5 s, compared to a fall time of 80 s if a pull-down resister is used. The voltage balance is achieved by a voltage-balancing resistor, clamped capacitance, and the synchronization of drive signals. Compared to the traditional method employing a pull-down resister or an additional hard tube, our design consumes less power and is more economical and reliable.

AB - A novel high voltage (HV) modulator that offers a short fall time to minimize sputtering effects and allow more precise control of the incident ion fluence in plasma immersion ion implantation is described. The use of 36 insulated-gate bipolar transistors in the 30 kV hard-tube pulser reduces the HV fall time to 3.5 s, compared to a fall time of 80 s if a pull-down resister is used. The voltage balance is achieved by a voltage-balancing resistor, clamped capacitance, and the synchronization of drive signals. Compared to the traditional method employing a pull-down resister or an additional hard tube, our design consumes less power and is more economical and reliable.

UR - https://www.scopus.com/pages/publications/79955617677

U2 - 10.1063/1.3575320

DO - 10.1063/1.3575320

M3 - 文章

AN - SCOPUS:79955617677

SN - 0034-6748

VL - 82

JO - Review of Scientific Instruments

JF - Review of Scientific Instruments

IS - 4

M1 - 045102

ER -

High voltage pulser with a fast fall-time for plasma immersion ion implantation

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