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High thermoelectric cooling performance of n-type Mg3Bi2-based materials

  • Jun Mao
  • , Hangtian Zhu
  • , Zhiwei Ding
  • , Zihang Liu
  • , Geethal Amila Gamage
  • , Gang Chen
  • , Zhifeng Ren*
  • *Corresponding author for this work
  • University of Houston
  • Massachusetts Institute of Technology

Research output: Contribution to journalArticlepeer-review

Abstract

Thermoelectric materials have a large Peltier effect, making them attractive for solid-state cooling applications. Bismuth telluride (Bi2Te3)-based alloys have remained the state-of-the-art room-temperature materials for many decades. However, cost partially limited wider use of thermoelectric cooling devices because of the large amounts of expensive tellurium required. We report n-type magnesium bismuthide (Mg3Bi2)-based materials with a peak figure of merit (ZT) of ~0.9 at 350 kelvin, which is comparable to the commercial bismuth telluride selenide (Bi2Te3-xSex) but much cheaper. A cooling device made of our material and p-type bismuth antimony telluride (Bi0.5Sb1.5Te3) has produced a large temperature difference of ~91 kelvin at the hot-side temperature of 350 kelvin. n-type Mg3Bi2-based materials are promising for thermoelectric cooling applications.

Original languageEnglish
Pages (from-to)495-498
Number of pages4
JournalScience
Volume365
Issue number6452
DOIs
StatePublished - 2 Aug 2019
Externally publishedYes

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