Skip to main navigation Skip to search Skip to main content

High-speed silicon micro-ring modulator at 2-μm waveband

  • Weihong Shen
  • , Gangqiang Zhou
  • , Jiangbing Du*
  • , Linjie Zhou
  • , Ke Xu
  • , Zuyuan He
  • *Corresponding author for this work
  • Shanghai Jiao Tong University
  • Harbin Institute of Technology Shenzhen

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Silicon micro-ring modulator with 18-GHz electro-optic bandwidth and <1-V·cm modulation efficiency was reported, achieving 50-Gbps highest-speed signaling at 1960 nm. Better endurance of two-photon absorption at 2μm leads to significantly improved high-speed performances.

Original languageEnglish
Title of host publication2021 Opto-Electronics and Communications Conference, OECC 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781943580927
StatePublished - 2021
Externally publishedYes
Event2021 Opto-Electronics and Communications Conference, OECC 2021 - Hong Kong, Hong Kong
Duration: 3 Jul 20217 Jul 2021

Publication series

Name2021 Opto-Electronics and Communications Conference, OECC 2021

Conference

Conference2021 Opto-Electronics and Communications Conference, OECC 2021
Country/TerritoryHong Kong
CityHong Kong
Period3/07/217/07/21

Fingerprint

Dive into the research topics of 'High-speed silicon micro-ring modulator at 2-μm waveband'. Together they form a unique fingerprint.

Cite this