High-selectivity anisotropic etching of single-crystal diamond by H plasma using iron catalysis

Kang Liu; Zhijun Lv; Bing Dai; Guoyang Shu; Jiwen Zhao; Benjian Liu; Weihua Wang; Jingjing Xue; Kaili Yao; Mingqi Sun; Ge Gao; Yang Wang; Jiaqi Zhu

doi:10.1016/j.diamond.2018.04.026

High-selectivity anisotropic etching of single-crystal diamond by H plasma using iron catalysis

Kang Liu
, Zhijun Lv
, Bing Dai
, Guoyang Shu
, Jiwen Zhao
, Benjian Liu
, Weihua Wang
, Jingjing Xue
, Kaili Yao
, Mingqi Sun
, Ge Gao
, Yang Wang
, Jiaqi Zhu^*

^*Corresponding author for this work

School of Astronautics

Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

A highly selective anisotropic etching method for single-crystal diamond was investigated. After a thin film of Fe was deposited on the diamond surface, it was processed in H plasma activated by microwave plasma-assisted-chemical vapor deposition (MPCVD). Spurred by the high catalytic activity of Fe, the diamond was easily etched, with masked areas (i.e., with no Fe deposition) remaining smooth or barely damaged. The etch rate was 180 nm min⁻¹. This method provides a simple and alternative way for diamond processing and patterning.

Original language	English
Pages (from-to)	186-192
Number of pages	7
Journal	Diamond and Related Materials
Volume	86
DOIs	https://doi.org/10.1016/j.diamond.2018.04.026
State	Published - Jun 2018

Keywords

Diamond etching
H plasma
Iron catalysis
MPCVD

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10.1016/j.diamond.2018.04.026

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@article{46d2e4e16c4a478e885cf29c5d8e556d,

title = "High-selectivity anisotropic etching of single-crystal diamond by H plasma using iron catalysis",

abstract = "A highly selective anisotropic etching method for single-crystal diamond was investigated. After a thin film of Fe was deposited on the diamond surface, it was processed in H plasma activated by microwave plasma-assisted-chemical vapor deposition (MPCVD). Spurred by the high catalytic activity of Fe, the diamond was easily etched, with masked areas (i.e., with no Fe deposition) remaining smooth or barely damaged. The etch rate was 180 nm min−1. This method provides a simple and alternative way for diamond processing and patterning.",

keywords = "Diamond etching, H plasma, Iron catalysis, MPCVD",

author = "Kang Liu and Zhijun Lv and Bing Dai and Guoyang Shu and Jiwen Zhao and Benjian Liu and Weihua Wang and Jingjing Xue and Kaili Yao and Mingqi Sun and Ge Gao and Yang Wang and Jiaqi Zhu",

note = "Publisher Copyright: {\textcopyright} 2018",

year = "2018",

month = jun,

doi = "10.1016/j.diamond.2018.04.026",

language = "英语",

volume = "86",

pages = "186--192",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - High-selectivity anisotropic etching of single-crystal diamond by H plasma using iron catalysis

AU - Liu, Kang

AU - Lv, Zhijun

AU - Dai, Bing

AU - Shu, Guoyang

AU - Zhao, Jiwen

AU - Liu, Benjian

AU - Wang, Weihua

AU - Xue, Jingjing

AU - Yao, Kaili

AU - Sun, Mingqi

AU - Gao, Ge

AU - Wang, Yang

AU - Zhu, Jiaqi

PY - 2018/6

Y1 - 2018/6

N2 - A highly selective anisotropic etching method for single-crystal diamond was investigated. After a thin film of Fe was deposited on the diamond surface, it was processed in H plasma activated by microwave plasma-assisted-chemical vapor deposition (MPCVD). Spurred by the high catalytic activity of Fe, the diamond was easily etched, with masked areas (i.e., with no Fe deposition) remaining smooth or barely damaged. The etch rate was 180 nm min−1. This method provides a simple and alternative way for diamond processing and patterning.

AB - A highly selective anisotropic etching method for single-crystal diamond was investigated. After a thin film of Fe was deposited on the diamond surface, it was processed in H plasma activated by microwave plasma-assisted-chemical vapor deposition (MPCVD). Spurred by the high catalytic activity of Fe, the diamond was easily etched, with masked areas (i.e., with no Fe deposition) remaining smooth or barely damaged. The etch rate was 180 nm min−1. This method provides a simple and alternative way for diamond processing and patterning.

KW - Diamond etching

KW - H plasma

KW - Iron catalysis

KW - MPCVD

UR - https://www.scopus.com/pages/publications/85047055234

U2 - 10.1016/j.diamond.2018.04.026

DO - 10.1016/j.diamond.2018.04.026

M3 - 文章

AN - SCOPUS:85047055234

SN - 0925-9635

VL - 86

SP - 186

EP - 192

JO - Diamond and Related Materials

JF - Diamond and Related Materials

ER -

High-selectivity anisotropic etching of single-crystal diamond by H plasma using iron catalysis

Abstract

Keywords

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