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High-repetition-rate passively Q-switched Nd:GdTaO4 1066 nm laser under 879 nm pumping

  • Yang Liu
  • , Renpeng Yan*
  • , Wentao Wu
  • , Xudong Li
  • , Zhiwei Dong
  • , Zhixiang Liu
  • , Xiaolin Wen
  • , Wenming Yao
  • , Fang Peng
  • , Qingli Zhang
  • , Renqin Dou
  • , Jing Gao
  • *Corresponding author for this work
  • Harbin Institute of Technology
  • Shenzhen Aerospace Industry Technology Research Institute
  • CAS - Suzhou Institute of Biomedical Engineering and Technology
  • CAS - Anhui Institute of Optics and Fine Mechanics
  • Suzhou Guoke Medical Science & Technology Development Co. Ltd

Research output: Contribution to journalArticlepeer-review

Abstract

We report an 879 nm laser diode directly pumped passively Q-switched Nd:GdTaO4 laser at 1066 nm. The continuous-wave output power at 1066 nm reaches 5.6 W under an incident pump power of 12.8 W, corresponding to an optical-to-optical efficiency of 43.8% and a slope efficiency of 48.0%. By using Cr4+:YAG as the saturable absorber, passively Q-switched laser operation is conducted, yielding a highest pulse repetition frequency of 185 kHz and a maximum average power of 3.6 W. The shortest pulse width of 15.2 ns is achieved with a peak power of 2.34 kW at 33.7 kHz. The beam quality factors at the maximum average output power is measured to be Mx 2 = 2.2, My 2 = 1.5 by using knife-edge method. The thermal focal length and internal loss for Nd:GdTaO4 crystal is also investigated.

Original languageEnglish
Article number103025
JournalInfrared Physics and Technology
Volume102
DOIs
StatePublished - Nov 2019

Keywords

  • LD pumped
  • Nd:GdTaO
  • Passively Q-switched

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