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High-precision alignment for low temperature wafer bonding

  • Chenxi Wang*
  • , Shingo Taniyama
  • , Ying Hui Wang
  • , Tadatomo Suga
  • *Corresponding author for this work
  • The University of Tokyo

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A novel wafer-to-wafer alignment method is developed using centrosymmetric moiré gratings. Moiré fringes produced by the two centrosymmetric square gratings are highly sensitive with the misalignments and misaligned directions without requiring any external reference. Using two pairs of these moire square gratings, misalignments of the bonded wafers are determined in X-Y-6 direction simultaneously on wafer scale. In our experiment, the misalignments in the order of ±0.5μm in X-Y direction can be easily identified using a simple infrared (IR) microscope. Moreover, these moiré gratings are suitable for being secondary alignment mark to achieve high-precision alignment as well. And the alignment accuracy assisted by these moiré gratings can be further improved to nanometer range if processing errors for the fabrication of the square centrosymmetric gratings are reduced.

Original languageEnglish
Title of host publicationECS Transactions - Semiconductor Wafer Bonding 10
Subtitle of host publicationScience, Technology, and Applications
PublisherElectrochemical Society Inc.
Pages539-548
Number of pages10
Edition8
ISBN (Print)9781566776547
DOIs
StatePublished - 2009
Externally publishedYes
EventSemiconductor Wafer Bonding 10: Science, Technology, and Applications - 214th ECS Meeting - Honolulu, HI, United States
Duration: 14 Oct 200816 Oct 2008

Publication series

NameECS Transactions
Number8
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceSemiconductor Wafer Bonding 10: Science, Technology, and Applications - 214th ECS Meeting
Country/TerritoryUnited States
CityHonolulu, HI
Period14/10/0816/10/08

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