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High power pulsed magnetron sputtering discharge behavior of various target materials

  • Zhongzhen Wu*
  • , Xiubo Tian
  • , Feng Pan
  • , K. Y.R. Fu
  • , K. P. Chu
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Great interesting is induced by high power pulsed magnetron sputtering (HPPMS) for its high ionization of the sputtered materials, while the complex discharge puts of its applications in industry. The HPPMS discharge behaviors of various materials with different sputtering yields (Cu, Cr, Mo, Ti, V and C) were studied. The discharges of all the materials show a phasic discharge characteristic of five continuous stages. However, the target voltage of the same discharge stage of the material increases firstly, and decreases then with the increase of the sputtering yields, exhibiting a missing of certain discharge stage. The statistics of the mean values, peaks and platforms of the target currents show that self-sputtering and stable platform happen easily to the materials with high sputtering yields which is suitable for the thin films deposition by HPPMS, whereas gas discharge is dominated in the discharge of the materials with low sputtering yields, which is difficult in the using of HPPMS. Additional, the target current is mainly contributed to the platform (metal discharge) to the materials with high sputtering yields and the peaks (gas discharge) to the materials with low sputtering yields, respectively.

Original languageEnglish
Pages (from-to)1279-1284
Number of pages6
JournalJinshu Xuebao/Acta Metallurgica Sinica
Volume50
Issue number10
DOIs
StatePublished - 11 Oct 2014

Keywords

  • High power pulsed magnetron sputtering
  • Sputtering yield
  • Target current
  • Target voltage

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