High power diode-pumped passively Q-switched and mode-locking Nd:GdVO 4 laser at 912 nm

Fei Chen; Xin Yu; Xudong Li; Renpeng Yan; Cheng Wang; Deying Chen; Zhonghua Zhang; Junhua Yu

doi:10.1016/j.optcom.2010.09.059

High power diode-pumped passively Q-switched and mode-locking Nd:GdVO ₄ laser at 912 nm

Fei Chen^*
, Xin Yu
, Xudong Li
, Renpeng Yan
, Cheng Wang
, Deying Chen
, Zhonghua Zhang
, Junhua Yu

^*Corresponding author for this work

School of Astronautics

Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

A high power diode-end-pumped passively Q-switched and mode-locking (QML) Nd:GdVO₄ laser at 912 nm was demonstrated for the first time, to the best of our knowledge. A Z-type laser cavity with Cr⁴⁺:YAG crystals as the intracavity saturable absorber were employed in the experiments. Influence of the initial transmission (T_U) of the saturable absorber on the QML laser performance was investigated. Using the T_U = 95% Cr⁴⁺:YAG, as much as an average output power of 2.0 W pulsed 912 nm laser was produced at an absorbed pump power of 25.0 W, then the repetition rates of the Q-switched envelope and the mode-locking pulse were ∼ 224 kHz and ∼ 160 MHz, respectively. Whereas the maximum output power was reduced to 1.3 W using the T_U = 90% Cr⁴⁺:YAG, we obtained a 100% modulation depth for the mode-locking pulses inside the Q-switched envelope.

Original language	English
Pages (from-to)	635-639
Number of pages	5
Journal	Optics Communications
Volume	284
Issue number	2
DOIs	https://doi.org/10.1016/j.optcom.2010.09.059
State	Published - 15 Jan 2011

Keywords

912 nm
Diode-pumped lasers
Nd:GdVO
Q-switched and mode-locking

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10.1016/j.optcom.2010.09.059

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@article{43f95fe191df494886c394a1ad2d9056,

title = "High power diode-pumped passively Q-switched and mode-locking Nd:GdVO 4 laser at 912 nm",

abstract = "A high power diode-end-pumped passively Q-switched and mode-locking (QML) Nd:GdVO4 laser at 912 nm was demonstrated for the first time, to the best of our knowledge. A Z-type laser cavity with Cr4+:YAG crystals as the intracavity saturable absorber were employed in the experiments. Influence of the initial transmission (TU) of the saturable absorber on the QML laser performance was investigated. Using the TU = 95\% Cr4+:YAG, as much as an average output power of 2.0 W pulsed 912 nm laser was produced at an absorbed pump power of 25.0 W, then the repetition rates of the Q-switched envelope and the mode-locking pulse were ∼ 224 kHz and ∼ 160 MHz, respectively. Whereas the maximum output power was reduced to 1.3 W using the TU = 90\% Cr4+:YAG, we obtained a 100\% modulation depth for the mode-locking pulses inside the Q-switched envelope.",

keywords = "912 nm, Diode-pumped lasers, Nd:GdVO, Q-switched and mode-locking",

author = "Fei Chen and Xin Yu and Xudong Li and Renpeng Yan and Cheng Wang and Deying Chen and Zhonghua Zhang and Junhua Yu",

year = "2011",

month = jan,

day = "15",

doi = "10.1016/j.optcom.2010.09.059",

language = "英语",

volume = "284",

pages = "635--639",

journal = "Optics Communications",

issn = "0030-4018",

publisher = "Elsevier B.V.",

number = "2",

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TY - JOUR

T1 - High power diode-pumped passively Q-switched and mode-locking Nd:GdVO 4 laser at 912 nm

AU - Chen, Fei

AU - Yu, Xin

AU - Li, Xudong

AU - Yan, Renpeng

AU - Wang, Cheng

AU - Chen, Deying

AU - Zhang, Zhonghua

AU - Yu, Junhua

PY - 2011/1/15

Y1 - 2011/1/15

N2 - A high power diode-end-pumped passively Q-switched and mode-locking (QML) Nd:GdVO4 laser at 912 nm was demonstrated for the first time, to the best of our knowledge. A Z-type laser cavity with Cr4+:YAG crystals as the intracavity saturable absorber were employed in the experiments. Influence of the initial transmission (TU) of the saturable absorber on the QML laser performance was investigated. Using the TU = 95% Cr4+:YAG, as much as an average output power of 2.0 W pulsed 912 nm laser was produced at an absorbed pump power of 25.0 W, then the repetition rates of the Q-switched envelope and the mode-locking pulse were ∼ 224 kHz and ∼ 160 MHz, respectively. Whereas the maximum output power was reduced to 1.3 W using the TU = 90% Cr4+:YAG, we obtained a 100% modulation depth for the mode-locking pulses inside the Q-switched envelope.

AB - A high power diode-end-pumped passively Q-switched and mode-locking (QML) Nd:GdVO4 laser at 912 nm was demonstrated for the first time, to the best of our knowledge. A Z-type laser cavity with Cr4+:YAG crystals as the intracavity saturable absorber were employed in the experiments. Influence of the initial transmission (TU) of the saturable absorber on the QML laser performance was investigated. Using the TU = 95% Cr4+:YAG, as much as an average output power of 2.0 W pulsed 912 nm laser was produced at an absorbed pump power of 25.0 W, then the repetition rates of the Q-switched envelope and the mode-locking pulse were ∼ 224 kHz and ∼ 160 MHz, respectively. Whereas the maximum output power was reduced to 1.3 W using the TU = 90% Cr4+:YAG, we obtained a 100% modulation depth for the mode-locking pulses inside the Q-switched envelope.

KW - 912 nm

KW - Diode-pumped lasers

KW - Nd:GdVO

KW - Q-switched and mode-locking

UR - https://www.scopus.com/pages/publications/78649322406

U2 - 10.1016/j.optcom.2010.09.059

DO - 10.1016/j.optcom.2010.09.059

M3 - 文章

AN - SCOPUS:78649322406

SN - 0030-4018

VL - 284

SP - 635

EP - 639

JO - Optics Communications

JF - Optics Communications

IS - 2

ER -

High power diode-pumped passively Q-switched and mode-locking Nd:GdVO ₄ laser at 912 nm

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Keywords

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