High-performance integrated passive technology by advanced SI-GaAs-based fabrication for RF and microwave applications

Cong Wang; Ji Hoon Lee; Nam Young Kim

doi:10.1002/mop.25018

High-performance integrated passive technology by advanced SI-GaAs-based fabrication for RF and microwave applications

Cong Wang^*
, Ji Hoon Lee
, Nam Young Kim

^*Corresponding author for this work

Kwangwoon University

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

In this letter, an advanced SI-GaAs-based manufacturing process is presented for creating high quality, cost effective, and compact size integrated passive devices. Through this advanced process, accurate thin film resistors, high Q spiral inductors, and high yield/ breakdown voltage metal-insulator-metal capacitors can be successfully realized.

Original language	English
Pages (from-to)	618-623
Number of pages	6
Journal	Microwave and Optical Technology Letters
Volume	52
Issue number	3
DOIs	https://doi.org/10.1002/mop.25018
State	Published - Mar 2010
Externally published	Yes

Keywords

Breakdown voltage
Integrated passive device
Metal-insulator-metal capacitor
Spiral inductor
Thin film resistor

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10.1002/mop.25018

Cite this

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title = "High-performance integrated passive technology by advanced SI-GaAs-based fabrication for RF and microwave applications",

abstract = "In this letter, an advanced SI-GaAs-based manufacturing process is presented for creating high quality, cost effective, and compact size integrated passive devices. Through this advanced process, accurate thin film resistors, high Q spiral inductors, and high yield/ breakdown voltage metal-insulator-metal capacitors can be successfully realized.",

keywords = "Breakdown voltage, Integrated passive device, Metal-insulator-metal capacitor, Spiral inductor, Thin film resistor",

author = "Cong Wang and Lee, \{Ji Hoon\} and Kim, \{Nam Young\}",

year = "2010",

month = mar,

doi = "10.1002/mop.25018",

language = "英语",

volume = "52",

pages = "618--623",

journal = "Microwave and Optical Technology Letters",

issn = "0895-2477",

publisher = "John Wiley \& Sons Inc.",

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T1 - High-performance integrated passive technology by advanced SI-GaAs-based fabrication for RF and microwave applications

AU - Wang, Cong

AU - Lee, Ji Hoon

AU - Kim, Nam Young

PY - 2010/3

Y1 - 2010/3

N2 - In this letter, an advanced SI-GaAs-based manufacturing process is presented for creating high quality, cost effective, and compact size integrated passive devices. Through this advanced process, accurate thin film resistors, high Q spiral inductors, and high yield/ breakdown voltage metal-insulator-metal capacitors can be successfully realized.

AB - In this letter, an advanced SI-GaAs-based manufacturing process is presented for creating high quality, cost effective, and compact size integrated passive devices. Through this advanced process, accurate thin film resistors, high Q spiral inductors, and high yield/ breakdown voltage metal-insulator-metal capacitors can be successfully realized.

KW - Breakdown voltage

KW - Integrated passive device

KW - Metal-insulator-metal capacitor

KW - Spiral inductor

KW - Thin film resistor

UR - https://www.scopus.com/pages/publications/74849124016

U2 - 10.1002/mop.25018

DO - 10.1002/mop.25018

M3 - 文章

AN - SCOPUS:74849124016

SN - 0895-2477

VL - 52

SP - 618

EP - 623

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

IS - 3

ER -

High-performance integrated passive technology by advanced SI-GaAs-based fabrication for RF and microwave applications

Abstract

Keywords

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