High-performance and flexible photodetectors based on chemical vapor deposition grown two-dimensional In₂Se₃ nanosheets

Two-dimensional (2D) In₂Se₃ with unique optical and electrical properties has great potential in next generation optoelectronics and multilevel phase-change memories. Here, for the first time, we report high-performance rigid and flexible photodetectors based on chemical vapor deposition (CVD) grown 2D In₂Se₃. Both rigid and flexible 2D In₂Se₃ photodetectors show a broadband response range from ultraviolet (254 nm) to visible light (700 nm). High photoresponsivities of 578 and 363 A • W^-1 are achieved using rigid and flexible 2D In₂Se₃ photodetectors, respectively, under 700 nm light illumination, which are higher than those of photodetectors based on mechanically exfoliated 2D In₂Se₃ and physical vapor deposition grown 2D In₂Se₃. Furthermore, flexible 2D In₂Se₃ photodetectors show good mechanical durability and photoresponse stability under repeated bending tests. A high and stable photoresponse provides an opportunity for CVD-grown 2D In₂Se₃ applications in flexible optoelectronic and photovoltaic devices.