High on/off ratio p-type field-effect transistor enabled by a single heavily Al-doped α-Si3N4 nanowire

Youqiang Chen; Xinni Zhang; Qing Zhao; Li He; Zhipeng Xie; Huatao Wang

doi:10.1039/c2cc30583f

High on/off ratio p-type field-effect transistor enabled by a single heavily Al-doped α-Si₃N₄ nanowire

Youqiang Chen^*
, Xinni Zhang
, Qing Zhao
, Li He
, Zhipeng Xie
, Huatao Wang

^*Corresponding author for this work

Qingdao University
Tsinghua University
Peking University
Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

For the first time, we fabricated p-type FETs using an individual heavily Al-doped α-Si₃N₄ NW with a single-crystal structure. The results show that despite a heavy Al-doping level, a typical device still exhibits high performance with an extremely high on/off ratio, 10³, at V _ds = −5 V.

Original language	English
Pages (from-to)	6016-6018
Number of pages	3
Journal	Chemical Communications
Volume	48
Issue number	48
DOIs	https://doi.org/10.1039/c2cc30583f
State	Published - 21 May 2012
Externally published	Yes

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title = "High on/off ratio p-type field-effect transistor enabled by a single heavily Al-doped α-Si3N4 nanowire",

abstract = "For the first time, we fabricated p-type FETs using an individual heavily Al-doped α-Si3N4 NW with a single-crystal structure. The results show that despite a heavy Al-doping level, a typical device still exhibits high performance with an extremely high on/off ratio, 103, at V ds = −5 V.",

author = "Youqiang Chen and Xinni Zhang and Qing Zhao and Li He and Zhipeng Xie and Huatao Wang",

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AU - Chen, Youqiang

AU - Zhang, Xinni

AU - Zhao, Qing

AU - He, Li

AU - Xie, Zhipeng

AU - Wang, Huatao

PY - 2012/5/21

Y1 - 2012/5/21

N2 - For the first time, we fabricated p-type FETs using an individual heavily Al-doped α-Si3N4 NW with a single-crystal structure. The results show that despite a heavy Al-doping level, a typical device still exhibits high performance with an extremely high on/off ratio, 103, at V ds = −5 V.

AB - For the first time, we fabricated p-type FETs using an individual heavily Al-doped α-Si3N4 NW with a single-crystal structure. The results show that despite a heavy Al-doping level, a typical device still exhibits high performance with an extremely high on/off ratio, 103, at V ds = −5 V.

UR - https://www.scopus.com/pages/publications/84861645984

U2 - 10.1039/c2cc30583f

DO - 10.1039/c2cc30583f

M3 - 文章

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SN - 1359-7345

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SP - 6016

EP - 6018

JO - Chemical Communications

JF - Chemical Communications

IS - 48

ER -

High on/off ratio p-type field-effect transistor enabled by a single heavily Al-doped α-Si₃N₄ nanowire

Abstract

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