High-mobility thin-film transistors based on aligned carbon nanotubes

Kai Xiao; Yunqi Liu; Ping'an Hu; Gui Yu; Xianbao Wang; Daoben Zhu

doi:10.1063/1.1589181

High-mobility thin-film transistors based on aligned carbon nanotubes

Kai Xiao
, Yunqi Liu^*
, Ping'an Hu
, Gui Yu
, Xianbao Wang
, Daoben Zhu

^*Corresponding author for this work

CAS - Institute of Chemistry

Research output: Contribution to journal › Article › peer-review

59 Scopus citations

Abstract

High-mobility thin-film transistors based on aligned carbon nanotubes (CNT) were fabricated by directly growing highly ordered CNTs on silicon dioxide surface. Electric transport through the aligned CNTs was dominated by the holes at room temperature. The hole mobility of the CNT thin-film transistor was estimated to be as high as 61.6 cm²/V s.

Original language	English
Pages (from-to)	150-152
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	1
DOIs	https://doi.org/10.1063/1.1589181
State	Published - 7 Jul 2003
Externally published	Yes

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title = "High-mobility thin-film transistors based on aligned carbon nanotubes",

abstract = "High-mobility thin-film transistors based on aligned carbon nanotubes (CNT) were fabricated by directly growing highly ordered CNTs on silicon dioxide surface. Electric transport through the aligned CNTs was dominated by the holes at room temperature. The hole mobility of the CNT thin-film transistor was estimated to be as high as 61.6 cm2/V s.",

author = "Kai Xiao and Yunqi Liu and Ping'an Hu and Gui Yu and Xianbao Wang and Daoben Zhu",

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AU - Xiao, Kai

AU - Liu, Yunqi

AU - Hu, Ping'an

AU - Yu, Gui

AU - Wang, Xianbao

AU - Zhu, Daoben

PY - 2003/7/7

Y1 - 2003/7/7

N2 - High-mobility thin-film transistors based on aligned carbon nanotubes (CNT) were fabricated by directly growing highly ordered CNTs on silicon dioxide surface. Electric transport through the aligned CNTs was dominated by the holes at room temperature. The hole mobility of the CNT thin-film transistor was estimated to be as high as 61.6 cm2/V s.

AB - High-mobility thin-film transistors based on aligned carbon nanotubes (CNT) were fabricated by directly growing highly ordered CNTs on silicon dioxide surface. Electric transport through the aligned CNTs was dominated by the holes at room temperature. The hole mobility of the CNT thin-film transistor was estimated to be as high as 61.6 cm2/V s.

UR - https://www.scopus.com/pages/publications/0041339694

U2 - 10.1063/1.1589181

DO - 10.1063/1.1589181

M3 - 文章

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SN - 0003-6951

VL - 83

SP - 150

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

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High-mobility thin-film transistors based on aligned carbon nanotubes

Abstract

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