High mobility multibit nonvolatile memory elements based organic field effect transistors with large hysteresis

High mobility multibit nonvolatile memory elements based on organic field effect transistors with a thin layer of polyquinoline (PQ) were reported. The devices show a high mobility of 1.5 cm² V^-1 s^-1 in the saturation region which is among the best reported for nonvolatile organic memory transistors. The multibit nonvolatile memory elements can be operated at voltage less than 100 V with good stability under continuous operation condition and show long retention time. The different initial scanning positive gate voltages to -100 V result in several ON states, while the scanning gate voltage from -100 V to positive voltage leads to same OFF state. The charge trapping model of electrons into the PQ layer was used to explain the origin of the memory properties.