TY - GEN
T1 - High-Linearity Double-Balanced Up-Conversion Mixer with an Active Balun Based on InGaP/GaAs HBT Technique
AU - Yu, He
AU - Wang, Cong
AU - Qiang, Tian
AU - Adhikari, Kishor Kumar
AU - Kumar, Alok
AU - Xie, Bing Fang
AU - Wu, Qun
AU - Meng, Fan Yi
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/12/5
Y1 - 2018/12/5
N2 - This paper presents a high-linearity double-balanced up-conversion mixer (DBUCM) based on InGaP/GaAs heterojunction bipolar transistor. The proposed DBUCM is combined with the Gilbert cell of an active push-pull type balun and designed for an interference cancellation system (ICS). Linearization techniques are applied to improve the linearity by introducing both emitter degeneration resistors (EDRs) and current injection resistors (CIRs). A DBUCM with EDRs and CIRs, which exhibited an overall chip size of 850mum× 850mum, was fabricated and implemented on a test board. The measured results indicated a conversion gain of -1.6 dB, a third-order intermodulation distortion of 54.2 dBc, a third-order output intercept point of -1.4 dBm, a third-order input intercept point of 0.2 dBm, and a 1-dB compression point of-11.0 dBm.
AB - This paper presents a high-linearity double-balanced up-conversion mixer (DBUCM) based on InGaP/GaAs heterojunction bipolar transistor. The proposed DBUCM is combined with the Gilbert cell of an active push-pull type balun and designed for an interference cancellation system (ICS). Linearization techniques are applied to improve the linearity by introducing both emitter degeneration resistors (EDRs) and current injection resistors (CIRs). A DBUCM with EDRs and CIRs, which exhibited an overall chip size of 850mum× 850mum, was fabricated and implemented on a test board. The measured results indicated a conversion gain of -1.6 dB, a third-order intermodulation distortion of 54.2 dBc, a third-order output intercept point of -1.4 dBm, a third-order input intercept point of 0.2 dBm, and a 1-dB compression point of-11.0 dBm.
UR - https://www.scopus.com/pages/publications/85060240917
U2 - 10.1109/ICMMT.2018.8563579
DO - 10.1109/ICMMT.2018.8563579
M3 - 会议稿件
AN - SCOPUS:85060240917
T3 - 2018 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2018 - Proceedings
BT - 2018 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2018 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 10th International Conference on Microwave and Millimeter Wave Technology, ICMMT 2018
Y2 - 6 May 2018 through 9 May 2018
ER -