High-integrated and small-sized X-band image rejection down-converter MMIC using InGaP/GaAs HBT process

Cong Wang; Nam Young Kim

doi:10.1002/mop.25852

High-integrated and small-sized X-band image rejection down-converter MMIC using InGaP/GaAs HBT process

Cong Wang
, Nam Young Kim^*

^*Corresponding author for this work

Kwangwoon University

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

A fully differential X-band image rejection down-converter is fabricated using Hartley architecture with a total chip area of 2.6 × 1.1 mm ² in InGaP/GaAs HBT monolithic microwave integrated circuit technology.This down-converter consists of two single-balanced mixers, a differential intermediate frequency (IF) amplifier, a local oscillator quadrature generator, a three-stage polyphase filter, and a differential voltage-controlled oscillator. This down-converter yields an image rejection ratio of over 30 dB, a conversion gain of over 30 dB, a noise figure of less than 3.5 dB, and an output-referred 1 dB compression power (P1_dB,OUT) of 2.5 dBm in the IF range 0.9-2 GHz. The broadband image rejection characteristics over a frequency range of 1.1 GHz with a current consumption of 35 mA are achieved.

Original language	English
Pages (from-to)	789-793
Number of pages	5
Journal	Microwave and Optical Technology Letters
Volume	53
Issue number	4
DOIs	https://doi.org/10.1002/mop.25852
State	Published - Apr 2011
Externally published	Yes

Keywords

LO quadrature generator
heterojunction bipolar transistor
image rejection down-converter
polyphase filter
voltage-controlled oscillator

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10.1002/mop.25852

Cite this

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title = "High-integrated and small-sized X-band image rejection down-converter MMIC using InGaP/GaAs HBT process",

abstract = "A fully differential X-band image rejection down-converter is fabricated using Hartley architecture with a total chip area of 2.6 × 1.1 mm 2 in InGaP/GaAs HBT monolithic microwave integrated circuit technology.This down-converter consists of two single-balanced mixers, a differential intermediate frequency (IF) amplifier, a local oscillator quadrature generator, a three-stage polyphase filter, and a differential voltage-controlled oscillator. This down-converter yields an image rejection ratio of over 30 dB, a conversion gain of over 30 dB, a noise figure of less than 3.5 dB, and an output-referred 1 dB compression power (P1dB,OUT) of 2.5 dBm in the IF range 0.9-2 GHz. The broadband image rejection characteristics over a frequency range of 1.1 GHz with a current consumption of 35 mA are achieved.",

keywords = "LO quadrature generator, heterojunction bipolar transistor, image rejection down-converter, polyphase filter, voltage-controlled oscillator",

author = "Cong Wang and Kim, \{Nam Young\}",

year = "2011",

month = apr,

doi = "10.1002/mop.25852",

language = "英语",

volume = "53",

pages = "789--793",

journal = "Microwave and Optical Technology Letters",

issn = "0895-2477",

publisher = "John Wiley \& Sons Inc.",

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T1 - High-integrated and small-sized X-band image rejection down-converter MMIC using InGaP/GaAs HBT process

AU - Wang, Cong

AU - Kim, Nam Young

PY - 2011/4

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N2 - A fully differential X-band image rejection down-converter is fabricated using Hartley architecture with a total chip area of 2.6 × 1.1 mm 2 in InGaP/GaAs HBT monolithic microwave integrated circuit technology.This down-converter consists of two single-balanced mixers, a differential intermediate frequency (IF) amplifier, a local oscillator quadrature generator, a three-stage polyphase filter, and a differential voltage-controlled oscillator. This down-converter yields an image rejection ratio of over 30 dB, a conversion gain of over 30 dB, a noise figure of less than 3.5 dB, and an output-referred 1 dB compression power (P1dB,OUT) of 2.5 dBm in the IF range 0.9-2 GHz. The broadband image rejection characteristics over a frequency range of 1.1 GHz with a current consumption of 35 mA are achieved.

AB - A fully differential X-band image rejection down-converter is fabricated using Hartley architecture with a total chip area of 2.6 × 1.1 mm 2 in InGaP/GaAs HBT monolithic microwave integrated circuit technology.This down-converter consists of two single-balanced mixers, a differential intermediate frequency (IF) amplifier, a local oscillator quadrature generator, a three-stage polyphase filter, and a differential voltage-controlled oscillator. This down-converter yields an image rejection ratio of over 30 dB, a conversion gain of over 30 dB, a noise figure of less than 3.5 dB, and an output-referred 1 dB compression power (P1dB,OUT) of 2.5 dBm in the IF range 0.9-2 GHz. The broadband image rejection characteristics over a frequency range of 1.1 GHz with a current consumption of 35 mA are achieved.

KW - LO quadrature generator

KW - heterojunction bipolar transistor

KW - image rejection down-converter

KW - polyphase filter

KW - voltage-controlled oscillator

UR - https://www.scopus.com/pages/publications/79951983357

U2 - 10.1002/mop.25852

DO - 10.1002/mop.25852

M3 - 文章

AN - SCOPUS:79951983357

SN - 0895-2477

VL - 53

SP - 789

EP - 793

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

IS - 4

ER -

High-integrated and small-sized X-band image rejection down-converter MMIC using InGaP/GaAs HBT process

Abstract

Keywords

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