High-Frequency Inverter with Compensated Impendace Matching Network and its Power Modulation Strategy

Radio frequency power amplifiers are indispensable components in numerous academic, medical, and industrial applications. In plasma etching applications, RF power amplification systems are typically required to deliver output capabilities with wide frequency bandwidth (13.56 ± 5% MHz) and adjustable power levels. To address these requirements, this paper proposes a compensated impedance matching network (CIMN). This network enables the projection of the actual load onto the target load within a specific frequency range, with matching characteristics remaining largely unaffected by frequency variations. To validate its feasibility, a Class E power amplifier operating at 12.88 MHz to 14.24 MHz with an output power of 350 W was constructed for experimental verification. Zero-voltage switching (ZVS) was achieved across the entire frequency variation range, with a peak efficiency reaching 91%.