High-field electrostatic control of ferromagnetic resonance in NiFe/PIN-PMN-PT multiferroic heterostructures

E. Yujia; Lei Ji; Kang Liu; Zhijun Lv; Jun Li; Xiaoou Wang; Bing Dai

doi:10.1007/s00339-018-1998-2

High-field electrostatic control of ferromagnetic resonance in NiFe/PIN-PMN-PT multiferroic heterostructures

E. Yujia
, Lei Ji
, Kang Liu
, Zhijun Lv
, Jun Li
, Xiaoou Wang
, Bing Dai^*

^*Corresponding author for this work

Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We report electric-field control of ferromagnetic resonance in NiFe film, which was deposited on (011)-cut 0.3Pb(In_1/2Nb_1/2)O₃-0.4Pb(Mg_1/3Nb_2/3)O₃-0.3PbTiO₃ (PIN-PMN-PT) single crystals. An upward frequency shift from 11.69 to 12.53 GHz is achieved in our heterostructures for electric field from 0 to 15 kV/cm as an external magnetic field of 2090 Oe was applied along in-plane [100] direction, and a downward shift from 13.61 to 13.25 GHz is investigated for electric field from 0 to 7 kV/cm, while an external magnetic field of 2723 Oe was applied along [011 -] direction. The large operational electric field and the high rhombohedral-tetragonal phase transition temperature T_R−T (~ 127 °C) of the crystal make NiFe/PIN-PMN-PT composites great candidates for electrically tunable microwave magnetic device applications with broad electric field and temperature range.

Original language	English
Article number	729
Journal	Applied Physics A: Materials Science and Processing
Volume	124
Issue number	11
DOIs	https://doi.org/10.1007/s00339-018-1998-2
State	Published - 1 Nov 2018

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@article{c42da7314e31450c857e35348c56623e,

title = "High-field electrostatic control of ferromagnetic resonance in NiFe/PIN-PMN-PT multiferroic heterostructures",

abstract = "We report electric-field control of ferromagnetic resonance in NiFe film, which was deposited on (011)-cut 0.3Pb(In1/2Nb1/2)O3-0.4Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PIN-PMN-PT) single crystals. An upward frequency shift from 11.69 to 12.53 GHz is achieved in our heterostructures for electric field from 0 to 15 kV/cm as an external magnetic field of 2090 Oe was applied along in-plane [100] direction, and a downward shift from 13.61 to 13.25 GHz is investigated for electric field from 0 to 7 kV/cm, while an external magnetic field of 2723 Oe was applied along [011 -] direction. The large operational electric field and the high rhombohedral-tetragonal phase transition temperature TR−T (\textasciitilde{} 127 °C) of the crystal make NiFe/PIN-PMN-PT composites great candidates for electrically tunable microwave magnetic device applications with broad electric field and temperature range.",

author = "E. Yujia and Lei Ji and Kang Liu and Zhijun Lv and Jun Li and Xiaoou Wang and Bing Dai",

note = "Publisher Copyright: {\textcopyright} 2018, Springer-Verlag GmbH Germany, part of Springer Nature.",

year = "2018",

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doi = "10.1007/s00339-018-1998-2",

language = "英语",

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journal = "Applied Physics A: Materials Science and Processing",

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T1 - High-field electrostatic control of ferromagnetic resonance in NiFe/PIN-PMN-PT multiferroic heterostructures

AU - Yujia, E.

AU - Ji, Lei

AU - Liu, Kang

AU - Lv, Zhijun

AU - Li, Jun

AU - Wang, Xiaoou

AU - Dai, Bing

PY - 2018/11/1

Y1 - 2018/11/1

N2 - We report electric-field control of ferromagnetic resonance in NiFe film, which was deposited on (011)-cut 0.3Pb(In1/2Nb1/2)O3-0.4Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PIN-PMN-PT) single crystals. An upward frequency shift from 11.69 to 12.53 GHz is achieved in our heterostructures for electric field from 0 to 15 kV/cm as an external magnetic field of 2090 Oe was applied along in-plane [100] direction, and a downward shift from 13.61 to 13.25 GHz is investigated for electric field from 0 to 7 kV/cm, while an external magnetic field of 2723 Oe was applied along [011 -] direction. The large operational electric field and the high rhombohedral-tetragonal phase transition temperature TR−T (~ 127 °C) of the crystal make NiFe/PIN-PMN-PT composites great candidates for electrically tunable microwave magnetic device applications with broad electric field and temperature range.

AB - We report electric-field control of ferromagnetic resonance in NiFe film, which was deposited on (011)-cut 0.3Pb(In1/2Nb1/2)O3-0.4Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PIN-PMN-PT) single crystals. An upward frequency shift from 11.69 to 12.53 GHz is achieved in our heterostructures for electric field from 0 to 15 kV/cm as an external magnetic field of 2090 Oe was applied along in-plane [100] direction, and a downward shift from 13.61 to 13.25 GHz is investigated for electric field from 0 to 7 kV/cm, while an external magnetic field of 2723 Oe was applied along [011 -] direction. The large operational electric field and the high rhombohedral-tetragonal phase transition temperature TR−T (~ 127 °C) of the crystal make NiFe/PIN-PMN-PT composites great candidates for electrically tunable microwave magnetic device applications with broad electric field and temperature range.

UR - https://www.scopus.com/pages/publications/85054499866

U2 - 10.1007/s00339-018-1998-2

DO - 10.1007/s00339-018-1998-2

M3 - 文章

AN - SCOPUS:85054499866

SN - 0947-8396

VL - 124

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 11

M1 - 729

ER -

High-field electrostatic control of ferromagnetic resonance in NiFe/PIN-PMN-PT multiferroic heterostructures

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