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Harmonic mode locking underneath the Q-switched envelope in passively Q-switched mode-locked Nd:GdTaO4 1066 nm laser

  • Renpeng Yan*
  • , Yang Liu
  • , Xudong Li
  • , Yiping Zhou
  • , Haobo Xu
  • , Yugang Jiang
  • , Xiaodong Wu
  • , Fang Peng
  • , Qingli Zhang
  • , Renqin Dou
  • , Jing Gao
  • *Corresponding author for this work
  • Harbin Institute of Technology
  • Tianjin Jinhang Technical Physics Institute
  • CAS - Suzhou Institute of Biomedical Engineering and Technology
  • CAS - Anhui Institute of Optics and Fine Mechanics
  • Suzhou Guoke Medical Science & Technology Development Co. Ltd

Research output: Contribution to journalArticlepeer-review

Abstract

In this work, harmonic mode locking in a laser diode pumped passively Q-switched mode-locked Nd:GdTaO4 1066 nm laser is presented by using Cr4+:YAG as saturable absorber. The average output power of the passively Q-switched mode-locked 1066 nm laser reaches 4.7 W with a repetition rate of 200.0 MHz and a pulse width of ~1.3 ns within a Q-switched envelope of 150.0 ns. By changing the Z-type cavity length, high-order harmonic mode locking operation of the passively Q-switched 1066 nm laser is conducted. The 3rd-order harmonically mode-locked 1066 nm laser yields a maximum average output power of 3.2 W and a pulse width of ~570 ps at 164.5 MHz repetition rate inside a Q-switched envelope of 419.7 ns long. The pulse repetition rate reaches 655.3 MHz in the 9th-order harmonically mode-locked 1066 nm laser.

Original languageEnglish
Article number103553
JournalInfrared Physics and Technology
Volume111
DOIs
StatePublished - Dec 2020

Keywords

  • Harmonic mode locking
  • Nd:GdTaO
  • Q-switched
  • Solid-state lasers

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