Growth parameters and substrate treatment for the MOCVD growth of ZnO

Jinzhong Wang; Vincent Sallet; Gaëlle Amiri; Jean François Rommeluère; Alain Lusson; E. Rzepka; John E. Lewis; Pierre Galtier; Ouri Gorochov

doi:10.1002/pssa.200420068

Growth parameters and substrate treatment for the MOCVD growth of ZnO

Jinzhong Wang
, Vincent Sallet^*
, Gaëlle Amiri
, Jean François Rommeluère
, Alain Lusson
, E. Rzepka
, John E. Lewis
, Pierre Galtier
, Ouri Gorochov

^*Corresponding author for this work

CNRS
SUNY Plattsburgh

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

ZnO films were grown on sapphire substrates using vertical MOCVD system with DEZn and tertiarybutanol as precursors, respectively. The benefits of substrate treatment on the microstructure and morphology of the film were shown. The influences of growth temperature and partial pressure ratio R _VI/II on crystal quality were investigated in detail. XRD, Electron Channeling Pattern and Raman spectra indicated that the highest crystal quality film was grown at 425°C when the partial pressure ratio of tertiarybutanol (t-Bu) to diethylzinc (DEZn) was 8. X-ray rocking curves exhibit Full Width at Half Maximum (FWHM) of 607 arcsec. A strong exciton emission peak appears in the photoluminescence (PL) spectra. Furthermore, the peak position has a slight shift to low energy with increase of the growth temperature.

Original language	English
Pages (from-to)	1967-1972
Number of pages	6
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	202
Issue number	10
DOIs	https://doi.org/10.1002/pssa.200420068
State	Published - Aug 2005
Externally published	Yes

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title = "Growth parameters and substrate treatment for the MOCVD growth of ZnO",

abstract = "ZnO films were grown on sapphire substrates using vertical MOCVD system with DEZn and tertiarybutanol as precursors, respectively. The benefits of substrate treatment on the microstructure and morphology of the film were shown. The influences of growth temperature and partial pressure ratio R VI/II on crystal quality were investigated in detail. XRD, Electron Channeling Pattern and Raman spectra indicated that the highest crystal quality film was grown at 425°C when the partial pressure ratio of tertiarybutanol (t-Bu) to diethylzinc (DEZn) was 8. X-ray rocking curves exhibit Full Width at Half Maximum (FWHM) of 607 arcsec. A strong exciton emission peak appears in the photoluminescence (PL) spectra. Furthermore, the peak position has a slight shift to low energy with increase of the growth temperature.",

author = "Jinzhong Wang and Vincent Sallet and Ga{\"e}lle Amiri and Rommelu{\`e}re, \{Jean Fran{\c c}ois\} and Alain Lusson and E. Rzepka and Lewis, \{John E.\} and Pierre Galtier and Ouri Gorochov",

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month = aug,

doi = "10.1002/pssa.200420068",

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TY - JOUR

T1 - Growth parameters and substrate treatment for the MOCVD growth of ZnO

AU - Wang, Jinzhong

AU - Sallet, Vincent

AU - Amiri, Gaëlle

AU - Rommeluère, Jean François

AU - Lusson, Alain

AU - Rzepka, E.

AU - Lewis, John E.

AU - Galtier, Pierre

AU - Gorochov, Ouri

PY - 2005/8

Y1 - 2005/8

N2 - ZnO films were grown on sapphire substrates using vertical MOCVD system with DEZn and tertiarybutanol as precursors, respectively. The benefits of substrate treatment on the microstructure and morphology of the film were shown. The influences of growth temperature and partial pressure ratio R VI/II on crystal quality were investigated in detail. XRD, Electron Channeling Pattern and Raman spectra indicated that the highest crystal quality film was grown at 425°C when the partial pressure ratio of tertiarybutanol (t-Bu) to diethylzinc (DEZn) was 8. X-ray rocking curves exhibit Full Width at Half Maximum (FWHM) of 607 arcsec. A strong exciton emission peak appears in the photoluminescence (PL) spectra. Furthermore, the peak position has a slight shift to low energy with increase of the growth temperature.

AB - ZnO films were grown on sapphire substrates using vertical MOCVD system with DEZn and tertiarybutanol as precursors, respectively. The benefits of substrate treatment on the microstructure and morphology of the film were shown. The influences of growth temperature and partial pressure ratio R VI/II on crystal quality were investigated in detail. XRD, Electron Channeling Pattern and Raman spectra indicated that the highest crystal quality film was grown at 425°C when the partial pressure ratio of tertiarybutanol (t-Bu) to diethylzinc (DEZn) was 8. X-ray rocking curves exhibit Full Width at Half Maximum (FWHM) of 607 arcsec. A strong exciton emission peak appears in the photoluminescence (PL) spectra. Furthermore, the peak position has a slight shift to low energy with increase of the growth temperature.

UR - https://www.scopus.com/pages/publications/25444493415

U2 - 10.1002/pssa.200420068

DO - 10.1002/pssa.200420068

M3 - 文章

AN - SCOPUS:25444493415

SN - 1862-6300

VL - 202

SP - 1967

EP - 1972

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 10

ER -

Growth parameters and substrate treatment for the MOCVD growth of ZnO

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