Growth of single-crystal diamond by microwave plasma CVD with high precursor utilization using cyclic gas injection and control of carbonaceous species content with optical emission spectroscopy

Yicun Li; Bing Dai; V. G. Ralchenko; Jilei Lyu; Xiaobin Hao; Jiwen Zhao; Sen Zhang; Kang Liu; Jiecai Han; A. P. Bolshakov; Jiaqi Zhu

doi:10.1016/j.vacuum.2022.111529

Growth of single-crystal diamond by microwave plasma CVD with high precursor utilization using cyclic gas injection and control of carbonaceous species content with optical emission spectroscopy

Yicun Li
, Bing Dai^*
, V. G. Ralchenko
, Jilei Lyu
, Xiaobin Hao
, Jiwen Zhao
, Sen Zhang
, Kang Liu
, Jiecai Han
, A. P. Bolshakov
, Jiaqi Zhu^*

^*Corresponding author for this work

School of Astronautics

Harbin Institute of Technology
HRG Institute (Zhongshan) of Unmanned Equipment and AI
Russian Academy of Sciences
Hubei Carbon Six Science and Technology Co., Ltd

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Single-crystal diamond was synthesized in a microwave plasma assisted chemical vapor deposition system with periodical injection of methane/hydrogen mixture in a closed reaction chamber. The gas was refreshed during a short time based on monitoring of carbonaceous species in the plasma with optical emission spectroscopy. The utilization of the precursors was increased with this strategy by about 12 times compared with the common process of the diamond growth using continuous gas flow. The structure of homoepitaxial diamond films produced in common and the periodical injection regimes was analyzed with scanning electron microscopy, atomic force microscopy, photoluminescence and Raman spectroscopy. The samples grown in the gas economy mode demonstrated a faster growth rate and smoother surface.

Original language	English
Article number	111529
Journal	Vacuum
Volume	206
DOIs	https://doi.org/10.1016/j.vacuum.2022.111529
State	Published - Dec 2022

Keywords

High utilization of precursors
MPCVD
Single-crystal diamond

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10.1016/j.vacuum.2022.111529

Cite this

Li, Y., Dai, B., Ralchenko, V. G., Lyu, J., Hao, X., Zhao, J., Zhang, S., Liu, K., Han, J., Bolshakov, A. P., & Zhu, J. (2022). Growth of single-crystal diamond by microwave plasma CVD with high precursor utilization using cyclic gas injection and control of carbonaceous species content with optical emission spectroscopy. Vacuum, 206, Article 111529. https://doi.org/10.1016/j.vacuum.2022.111529

@article{a99c9a63cc054ac3bf485d454aceb4f0,

title = "Growth of single-crystal diamond by microwave plasma CVD with high precursor utilization using cyclic gas injection and control of carbonaceous species content with optical emission spectroscopy",

abstract = "Single-crystal diamond was synthesized in a microwave plasma assisted chemical vapor deposition system with periodical injection of methane/hydrogen mixture in a closed reaction chamber. The gas was refreshed during a short time based on monitoring of carbonaceous species in the plasma with optical emission spectroscopy. The utilization of the precursors was increased with this strategy by about 12 times compared with the common process of the diamond growth using continuous gas flow. The structure of homoepitaxial diamond films produced in common and the periodical injection regimes was analyzed with scanning electron microscopy, atomic force microscopy, photoluminescence and Raman spectroscopy. The samples grown in the gas economy mode demonstrated a faster growth rate and smoother surface.",

keywords = "High utilization of precursors, MPCVD, Single-crystal diamond",

author = "Yicun Li and Bing Dai and Ralchenko, \{V. G.\} and Jilei Lyu and Xiaobin Hao and Jiwen Zhao and Sen Zhang and Kang Liu and Jiecai Han and Bolshakov, \{A. P.\} and Jiaqi Zhu",

note = "Publisher Copyright: {\textcopyright} 2022 Elsevier Ltd",

year = "2022",

month = dec,

doi = "10.1016/j.vacuum.2022.111529",

language = "英语",

volume = "206",

journal = "Vacuum",

issn = "0042-207X",

publisher = "Elsevier Ltd",

}

Li, Y, Dai, B, Ralchenko, VG, Lyu, J, Hao, X, Zhao, J, Zhang, S , Liu, K , Han, J, Bolshakov, AP & Zhu, J 2022, 'Growth of single-crystal diamond by microwave plasma CVD with high precursor utilization using cyclic gas injection and control of carbonaceous species content with optical emission spectroscopy', Vacuum, vol. 206, 111529. https://doi.org/10.1016/j.vacuum.2022.111529

TY - JOUR

T1 - Growth of single-crystal diamond by microwave plasma CVD with high precursor utilization using cyclic gas injection and control of carbonaceous species content with optical emission spectroscopy

AU - Li, Yicun

AU - Dai, Bing

AU - Ralchenko, V. G.

AU - Lyu, Jilei

AU - Hao, Xiaobin

AU - Zhao, Jiwen

AU - Zhang, Sen

AU - Liu, Kang

AU - Han, Jiecai

AU - Bolshakov, A. P.

AU - Zhu, Jiaqi

PY - 2022/12

Y1 - 2022/12

N2 - Single-crystal diamond was synthesized in a microwave plasma assisted chemical vapor deposition system with periodical injection of methane/hydrogen mixture in a closed reaction chamber. The gas was refreshed during a short time based on monitoring of carbonaceous species in the plasma with optical emission spectroscopy. The utilization of the precursors was increased with this strategy by about 12 times compared with the common process of the diamond growth using continuous gas flow. The structure of homoepitaxial diamond films produced in common and the periodical injection regimes was analyzed with scanning electron microscopy, atomic force microscopy, photoluminescence and Raman spectroscopy. The samples grown in the gas economy mode demonstrated a faster growth rate and smoother surface.

AB - Single-crystal diamond was synthesized in a microwave plasma assisted chemical vapor deposition system with periodical injection of methane/hydrogen mixture in a closed reaction chamber. The gas was refreshed during a short time based on monitoring of carbonaceous species in the plasma with optical emission spectroscopy. The utilization of the precursors was increased with this strategy by about 12 times compared with the common process of the diamond growth using continuous gas flow. The structure of homoepitaxial diamond films produced in common and the periodical injection regimes was analyzed with scanning electron microscopy, atomic force microscopy, photoluminescence and Raman spectroscopy. The samples grown in the gas economy mode demonstrated a faster growth rate and smoother surface.

KW - High utilization of precursors

KW - MPCVD

KW - Single-crystal diamond

UR - https://www.scopus.com/pages/publications/85139314430

U2 - 10.1016/j.vacuum.2022.111529

DO - 10.1016/j.vacuum.2022.111529

M3 - 文章

AN - SCOPUS:85139314430

SN - 0042-207X

VL - 206

JO - Vacuum

JF - Vacuum

M1 - 111529

ER -

Growth of single-crystal diamond by microwave plasma CVD with high precursor utilization using cyclic gas injection and control of carbonaceous species content with optical emission spectroscopy

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Keywords

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