Growth of nanowires from annealing SiBONC nanopowders

Silicon carbide (SiC) nanowires were prepared by the gas pressure annealing of SiBONC powders, which were synthesized by pyrolysis of a polymeric precursor. The yield, morphology and composition of the nanowires were influenced by the Si/B ratio in the original ceramic powders, annealing temperature and atmosphere. Annealing temperatures between 1500 and 1600 °C and Si/B molar ratios between 70:30 to 60:40 were suitable for growth of the nanowires. When annealing in an argon (Ar) atmosphere, the SiC nanowires contained little oxygen (O); and the diameters ranged from 20 to 200 nm. Then annealing in a nitrogen (N₂) atmosphere, the nanowires were thicker and rougher, and consisted of a relatively high level of nitrogen. Varied shapes and morphologies of the nanowires were observed for different synthesis conditions. The present novel method makes possible the large-scale fabrication of β-SiC nanowires.