Growth of multi-morphology amorphous silicon oxycarbide nanowires during the laser ablation of polymer-derived silicon carbonitride

Multi-morphology amorphous SiOC nanowires were successfully prepared within the interfacial interstices between the unaffected SiCN ceramic and the bracket during the laser ablation of polymer-derived SiCN ceramic in a low-pressure argon atmosphere. Laser irradiation experiments were performed using a continuous-wave CO₂ laser, and the gas source for the growth of amorphous SiOC nanowires was provided by the laser ablation of the SiCN ceramic. X-ray photoelectron spectroscopy shows that the amorphous SiOC nanowires possess a SiO₂ dominated nanostructure, and the formation of amorphous SiOC nanowires is attributed to the good diffusivity of CO in SiO₂. The morphologies of the amorphous SiOC nanowires include straight nanowires, beaded nanowires, helical nanowires, and branched nanowires, and these are determined by the flowing state of the reactant gases, the laser power, and the surface morphology of the SiCN ceramics. Each amorphous SiOC nanowire with specific morphology can be uniformly distributed in separate regions, which makes it possible to control the growth of amorphous SiOC nanowires in different morphologies.