Growth and thermoelectric properties of FeSb2 films produced by pulsed laser deposition

Ye Sun; Stela Canulescu; Peijie Sun; Frank Steglich; Nini Pryds; Jørgen Schou; Bo Brummerstedt Iversen

doi:10.1007/s00339-011-6431-z

Growth and thermoelectric properties of FeSb₂ films produced by pulsed laser deposition

Ye Sun
, Stela Canulescu
, Peijie Sun
, Frank Steglich
, Nini Pryds
, Jørgen Schou
, Bo Brummerstedt Iversen^*

^*Corresponding author for this work

Aarhus University
Technical University of Denmark
Max Planck Institute for Chemical Physics of Solids

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Thermoelectric FeSb₂ films were produced by pulsed laser deposition on silica substrates in a low-pressure Ar environment. The growth conditions for near phase-pure FeSb₂ films were confirmed to be optimized at a substrate temperature of 425°C, an Ar pressure of 2 Pa, and deposition time of 3 h by ablating specifically prepared compound targets made of Fe and Sb powders in atomic ratio of 1:4. The thermoelectric transport properties of FeSb₂ films were investigated. Pulsed laser deposition was demonstrated as a method for production of good-quality FeSb₂ films.

Original language	English
Pages (from-to)	883-887
Number of pages	5
Journal	Applied Physics A: Materials Science and Processing
Volume	104
Issue number	3
DOIs	https://doi.org/10.1007/s00339-011-6431-z
State	Published - Sep 2011
Externally published	Yes

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title = "Growth and thermoelectric properties of FeSb2 films produced by pulsed laser deposition",

abstract = "Thermoelectric FeSb2 films were produced by pulsed laser deposition on silica substrates in a low-pressure Ar environment. The growth conditions for near phase-pure FeSb2 films were confirmed to be optimized at a substrate temperature of 425°C, an Ar pressure of 2 Pa, and deposition time of 3 h by ablating specifically prepared compound targets made of Fe and Sb powders in atomic ratio of 1:4. The thermoelectric transport properties of FeSb2 films were investigated. Pulsed laser deposition was demonstrated as a method for production of good-quality FeSb2 films.",

author = "Ye Sun and Stela Canulescu and Peijie Sun and Frank Steglich and Nini Pryds and J{\o}rgen Schou and Iversen, \{Bo Brummerstedt\}",

year = "2011",

month = sep,

doi = "10.1007/s00339-011-6431-z",

language = "英语",

volume = "104",

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journal = "Applied Physics A: Materials Science and Processing",

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T1 - Growth and thermoelectric properties of FeSb2 films produced by pulsed laser deposition

AU - Sun, Ye

AU - Canulescu, Stela

AU - Sun, Peijie

AU - Steglich, Frank

AU - Pryds, Nini

AU - Schou, Jørgen

AU - Iversen, Bo Brummerstedt

PY - 2011/9

Y1 - 2011/9

N2 - Thermoelectric FeSb2 films were produced by pulsed laser deposition on silica substrates in a low-pressure Ar environment. The growth conditions for near phase-pure FeSb2 films were confirmed to be optimized at a substrate temperature of 425°C, an Ar pressure of 2 Pa, and deposition time of 3 h by ablating specifically prepared compound targets made of Fe and Sb powders in atomic ratio of 1:4. The thermoelectric transport properties of FeSb2 films were investigated. Pulsed laser deposition was demonstrated as a method for production of good-quality FeSb2 films.

AB - Thermoelectric FeSb2 films were produced by pulsed laser deposition on silica substrates in a low-pressure Ar environment. The growth conditions for near phase-pure FeSb2 films were confirmed to be optimized at a substrate temperature of 425°C, an Ar pressure of 2 Pa, and deposition time of 3 h by ablating specifically prepared compound targets made of Fe and Sb powders in atomic ratio of 1:4. The thermoelectric transport properties of FeSb2 films were investigated. Pulsed laser deposition was demonstrated as a method for production of good-quality FeSb2 films.

UR - https://www.scopus.com/pages/publications/80053920097

U2 - 10.1007/s00339-011-6431-z

DO - 10.1007/s00339-011-6431-z

M3 - 文章

AN - SCOPUS:80053920097

SN - 0947-8396

VL - 104

SP - 883

EP - 887

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 3

ER -

Growth and thermoelectric properties of FeSb₂ films produced by pulsed laser deposition

Abstract

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