Growth and structure of aligned B-C-N nanotubes

J. Yu; Q. Zhang; J. Ahn; S. F. Yoon; Rusli; B. Gan; K. Chew; K. H. Tan; X. D. Bai; E. G. Wang

doi:10.1116/1.1371316

Growth and structure of aligned B-C-N nanotubes

J. Yu^*
, Q. Zhang
, J. Ahn
, S. F. Yoon
, Rusli
, B. Gan
, K. Chew
, K. H. Tan
, X. D. Bai
, E. G. Wang

^*Corresponding author for this work

National Institute for Materials Science Tsukuba
Nanyang Technological University
CAS - Institute of Physics

Research output: Contribution to journal › Conference article › peer-review

12 Scopus citations

Abstract

A study of growth and structure of aligned B-C-N nanotubes prepared using bias assisted chemical vapor deposition was discussed. The polycrystalline nickle wafers which act as catalysts were used as substrates. The results showed that an important role is played by the discharge current on the aligned growth of the nanotubes. The area density of nanotubes was found to increase with an increase in the discharge current.

Original language	English
Pages (from-to)	671-674
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	19
Issue number	3
DOIs	https://doi.org/10.1116/1.1371316
State	Published - May 2001
Externally published	Yes
Event	13th International Vaccum Microelectronics Conference - Guangzhou, China Duration: 14 Aug 2000 → 17 Aug 2000

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title = "Growth and structure of aligned B-C-N nanotubes",

abstract = "A study of growth and structure of aligned B-C-N nanotubes prepared using bias assisted chemical vapor deposition was discussed. The polycrystalline nickle wafers which act as catalysts were used as substrates. The results showed that an important role is played by the discharge current on the aligned growth of the nanotubes. The area density of nanotubes was found to increase with an increase in the discharge current.",

author = "J. Yu and Q. Zhang and J. Ahn and Yoon, \{S. F.\} and Rusli and B. Gan and K. Chew and Tan, \{K. H.\} and Bai, \{X. D.\} and Wang, \{E. G.\}",

year = "2001",

month = may,

doi = "10.1116/1.1371316",

language = "英语",

volume = "19",

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note = "13th International Vaccum Microelectronics Conference ; Conference date: 14-08-2000 Through 17-08-2000",

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T1 - Growth and structure of aligned B-C-N nanotubes

AU - Yu, J.

AU - Zhang, Q.

AU - Ahn, J.

AU - Yoon, S. F.

AU - Rusli,

AU - Gan, B.

AU - Chew, K.

AU - Tan, K. H.

AU - Bai, X. D.

AU - Wang, E. G.

PY - 2001/5

Y1 - 2001/5

N2 - A study of growth and structure of aligned B-C-N nanotubes prepared using bias assisted chemical vapor deposition was discussed. The polycrystalline nickle wafers which act as catalysts were used as substrates. The results showed that an important role is played by the discharge current on the aligned growth of the nanotubes. The area density of nanotubes was found to increase with an increase in the discharge current.

AB - A study of growth and structure of aligned B-C-N nanotubes prepared using bias assisted chemical vapor deposition was discussed. The polycrystalline nickle wafers which act as catalysts were used as substrates. The results showed that an important role is played by the discharge current on the aligned growth of the nanotubes. The area density of nanotubes was found to increase with an increase in the discharge current.

UR - https://www.scopus.com/pages/publications/0035326369

U2 - 10.1116/1.1371316

DO - 10.1116/1.1371316

M3 - 会议文章

AN - SCOPUS:0035326369

SN - 1071-1023

VL - 19

SP - 671

EP - 674

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

T2 - 13th International Vaccum Microelectronics Conference

Y2 - 14 August 2000 through 17 August 2000

ER -

Growth and structure of aligned B-C-N nanotubes

Abstract

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