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Growth and storage properties of Zn:Ce:Mn:LiNbO3 crystals

  • Chaozhong Zhao*
  • , Chunhui Yang
  • , Yuheng Xu
  • *Corresponding author for this work
  • Harbin Normal University
  • Harbin Institute of Technology

Research output: Contribution to journalConference articlepeer-review

Abstract

Doping ZnO with the concentration of 3mol% and 7mol% in Ce:Mn:LiNbO3, respectively, Zn:Ce:Mn:LiNbO3 crystals were grown by Czochralski method. The optical damage resistance ability of crystals was measured. The optical damage resistance ability of Zn (7mol%):Ce:Mn:LiNbO3 crystal is two orders magnitude higher than that of Ce:Mn:LiNbO3 crystal. The exponentional gain coefficient, diffraction efficiency, response time and effective charge concentration were also obtained. The response speed of Zn(3mol%):Ce:Mn:LiNbO3 and Zn(7mol%):Ce:Mn:LiNbO3 crystal is two times and four times higher than that of Ce:Mn:LiNbO3, respectively. The mechanism of optical damage resistance ability of Zn:Ce:Mn:LiNbO3 crystal was researched.

Original languageEnglish
Pages (from-to)319-323
Number of pages5
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4930
DOIs
StatePublished - 17 Sep 2002
EventAdvanced Optical Storage Technology 2002 - Shanghai, China
Duration: 14 Oct 200218 Oct 2002

Keywords

  • Czochralski
  • Optical damage resistance ability
  • Zn:Ce:Mn:LiNbO crystal

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