Abstract
Doping ZnO with the concentration of 3mol% and 7mol% in Ce:Mn:LiNbO3, respectively, Zn:Ce:Mn:LiNbO3 crystals were grown by Czochralski method. The optical damage resistance ability of crystals was measured. The optical damage resistance ability of Zn (7mol%):Ce:Mn:LiNbO3 crystal is two orders magnitude higher than that of Ce:Mn:LiNbO3 crystal. The exponentional gain coefficient, diffraction efficiency, response time and effective charge concentration were also obtained. The response speed of Zn(3mol%):Ce:Mn:LiNbO3 and Zn(7mol%):Ce:Mn:LiNbO3 crystal is two times and four times higher than that of Ce:Mn:LiNbO3, respectively. The mechanism of optical damage resistance ability of Zn:Ce:Mn:LiNbO3 crystal was researched.
| Original language | English |
|---|---|
| Pages (from-to) | 319-323 |
| Number of pages | 5 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 4930 |
| DOIs | |
| State | Published - 17 Sep 2002 |
| Event | Advanced Optical Storage Technology 2002 - Shanghai, China Duration: 14 Oct 2002 → 18 Oct 2002 |
Keywords
- Czochralski
- Optical damage resistance ability
- Zn:Ce:Mn:LiNbO crystal
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